Implantation angle dependent study of vacancy related defect profiles in ion implanted silicon

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Tilt angle and dose rate monitoring of low energy ion implantation processes with photomodulated reflectance measurement: AM: Advanced Metrology

A Pongrácz, J Szívós, F Ujhelyi, Z Zolnai… - 2020 31st Annual …, 2020 - ieeexplore.ieee.org
Photo-modulated reflectance measurements provide a powerful, non-contact, non-
destructive and inline-compatible method with low-cost operation for statistical process …
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Dislocation sink annihilating threading dislocations in strain-relaxed Si1− xGex layer

SJ Choi, IH Kim, JS Park, TH Shim, JG Park - Nanotechnology, 2020 - iopscience.iop.org
We proposed a dislocation sink technology for achieving Si 1− x Ge x multi-bridge-channel
field-effect-transistor beyond 5 nm transistor design-rule that essentially needs an almost …
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Deep-level transient spectroscopy study of channelled boron implantation in silicon.

L Deam, BC Johnson… - 2010 Conference on …, 2010 - ieeexplore.ieee.org
Boron ions will be implanted at 150 keV down the<; 100>; axis of n-type silicon. Deep-level
transient spectroscopy will be used to study the range, concentration and species of the …
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Constant Capacitance Deep-Level Transient Spectroscopy Study of Bulk Traps and Interface States in P Implanted Si MOS Capacitors

BJ Villis, JC McCallum, MDH Lay… - … on Optoelectronic and …, 2004 - ieeexplore.ieee.org
Constant capacitance deep-level transient spectroscopy (CC-DLTS) has been used to study
bulk traps and interface states in Si metal-oxide semiconductor (MOS) capacitors with 50 nm …
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[CITARE][C] 粉煤灰水泥体系中粉煤灰活性的化学激发

栾晓风， 潘志华， 王冬冬 - 硅酸盐通报, 2010
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[CITARE][C] 快中子辐照硅中双空位的退火行为研究

杨帅， 邓晓冉， 徐建萍， 陈贵锋， 闫文博 - 硅酸盐通报, 2010
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[CITARE][C] 快中子辐照直拉硅中 V_2 的退火研究

邓晓冉， 杨帅 - 天津工程师范学院学报, 2008
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[CITARE][C] Studies of the electrical and optical properties of defects in ion implanted silicon

BJ Villis - 2010 - University of Melbourne, School of …
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