[HTML][HTML] Synthetic approaches to two-dimensional transition metal dichalcogenide nanosheets
Two-dimensional transition metal dichalcogenides (TMDCs) have become the focus of
intense research due to their unique physical and chemical properties. These features arise …
intense research due to their unique physical and chemical properties. These features arise …
Environmental analysis with 2D transition-metal dichalcogenide-based field-effect transistors
X Chen, C Liu, S Mao - Nano-micro letters, 2020 - Springer
Field-effect transistors (FETs) present highly sensitive, rapid, and in situ detection capability
in chemical and biological analysis. Recently, two-dimensional (2D) transition-metal …
in chemical and biological analysis. Recently, two-dimensional (2D) transition-metal …
Electric and Photovoltaic Behavior of a Few‐Layer α‐MoTe2/MoS2 Dichalcogenide Heterojunction
Herein, we attempt to fabricate ap–n diode van der Waals heterojunction by direct
imprinting,[4] by transferring p-type α-MoTe 2 onto an n-type MoS 2 nanoflake; this is …
imprinting,[4] by transferring p-type α-MoTe 2 onto an n-type MoS 2 nanoflake; this is …
Sub-10 nm nanopattern architecture for 2D material field-effect transistors
Two-dimensional materials (2DMs) are competitive candidates in replacing or
supplementing conventional semiconductors owing to their atomically uniform thickness …
supplementing conventional semiconductors owing to their atomically uniform thickness …
Homogeneous 2D MoTe2 p–n Junctions and CMOS Inverters formed by Atomic‐Layer‐Deposition‐Induced Do**
Recently, α‐MoTe2, a 2D transition‐metal dichalcogenide (TMD), has shown outstanding
properties, aiming at future electronic devices. Such TMD structures without surface …
properties, aiming at future electronic devices. Such TMD structures without surface …
Low Power Consumption Complementary Inverters with n-MoS2 and p-WSe2 Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits
PJ Jeon, JS Kim, JY Lim, Y Cho… - … applied materials & …, 2015 - ACS Publications
Two-dimensional (2D) semiconductor materials with discrete bandgap become important
because of their interesting physical properties and potentials toward future nanoscale …
because of their interesting physical properties and potentials toward future nanoscale …
Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors
Molybdenum ditelluride (α-MoTe2) is an emerging transition-metal dichalcogenide (TMD)
semiconductor that has been attracting attention due to its favorable optical and electronic …
semiconductor that has been attracting attention due to its favorable optical and electronic …
Surface/Interface engineering for constructing advanced nanostructured photodetectors with improved performance: A brief review
M Ding, Z Guo, X Chen, X Ma, L Zhou - Nanomaterials, 2020 - mdpi.com
Semiconductor-based photodetectors (PDs) convert light signals into electrical signals via a
photon–matter interaction process, which involves surface/interface carrier generation …
photon–matter interaction process, which involves surface/interface carrier generation …
The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility
The integration of ultra-thin gate oxide, especially at sub-10 nm region, is one of the
principle problems in MoS2 based transistors. In this work, we demonstrate sub-10 nm …
principle problems in MoS2 based transistors. In this work, we demonstrate sub-10 nm …
[HTML][HTML] The growth mechanism of transition metal dichalcogenides by using sulfurization of pre-deposited transition metals and the 2D crystal hetero-structure …
A growth model is proposed for the large-area and uniform MoS 2 film grown by using
sulfurization of pre-deposited Mo films on sapphire substrates. During the sulfurization …
sulfurization of pre-deposited Mo films on sapphire substrates. During the sulfurization …