This paper reviews aspects of nonlinear optical spectroscopy of interfaces. The emphasis is
put on second-order nonlinear optical techniques, such as sum-frequency generation (SFG) …

Semiconductor Surfaces and Interfaces deals with structural and electronic properties of
semiconductor surfaces and interfaces. The first part introduces the general aspects of …

This article reviews the spectroscopic properties of hydrogen bound to a large variety of
synthetic compounds like simple oxides, perovskites, the LiNbO3 family, KTP, sillenites …

Vacuum scanning tunneling microscopy has been used to investigate the hydrogen-
terminated Si (111) surfaces obtained upon dissolution of the native oxide in HF and NH 4 F …

Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor,
insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic …

Tunneling images of the ideal Si (111): H-1× 1 surface exhibit features and electronic
structure consistent with a simple termination of the surface dangling bonds by atomic …

Infrared spectroscopy is used to study the etching process of stepped Si (111) 9° surfaces as
a function of the p H of the etching HF solutions. This process results in complete H …

High resolution electron energy loss spectroscopy (EELS) and infrared absorption
spectroscopy (IRAS) are used to characterize Si (111) and Si (100) surfaces after chemical …

Optical second-harmonic and sum-frequency spectra of clean and oxidized Si (100) and Si
(111) samples reveal a strong resonance band at 3.3 eV photon energy. It is concluded that …

A general method for the non-oxidative functionalization of single-crystal silicon (111)
surfaces is described. The silicon surface is fully acetylenylated using two-step …