GaN-based light-emitting diodes on various substrates: a critical review

G Li, W Wang, W Yang, Y Lin, H Wang… - Reports on Progress …, 2016 - iopscience.iop.org
GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …

Prospects of III-nitride optoelectronics grown on Si

D Zhu, DJ Wallis, CJ Humphreys - Reports on Progress in …, 2013 - iopscience.iop.org
The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications
such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and …

[LIVRE][B] Light-emitting diodes (2018)

EF Schubert - 2018 - books.google.com
The 1st edition of the book “Light-Emitting Diodes” was published in 2003. The 2nd edition
was published in 2006. The current 3rd edition of the book, a substantial expansion of the …

[LIVRE][B] Organic light emitting devices: synthesis, properties and applications

K Müllen, U Scherf - 2006 - books.google.com
This high-class book reflects a decade of intense research, culminating in excellent
successes over the last few years. The contributions from both academia as well as the …

Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors

SF Chichibu, A Uedono, T Onuma, BA Haskell… - Nature materials, 2006 - nature.com
Group-III-nitride semiconductors have shown enormous potential as light sources for full-
colour displays, optical storage and solid-state lighting. Remarkably, InGaN blue-and green …

Solid-state lighting

CJ Humphreys - MRS bulletin, 2008 - cambridge.org
Electricity generation is the main source of energy-related greenhouse gas emissions and
lighting uses one-fifth of its output. Solid-state lighting using light-emitting diodes (LEDs) is …

Research challenges to ultra‐efficient inorganic solid‐state lighting

JM Phillips, ME Coltrin, MH Crawford… - Laser & Photonics …, 2007 - Wiley Online Library
Solid‐state lighting is a rapidly evolving, emerging technology whose efficiency of
conversion of electricity to visible white light is likely to approach 50% within the next several …

Defect related issues in the “current roll-off” in InGaN based light emitting diodes

B Monemar, BE Sernelius - Applied Physics Letters, 2007 - pubs.aip.org
Defect related contributions to the reduction of the internal quantum efficiency of InGaN-
based multiple quantum well light emitting diodes under high forward bias conditions are …

Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells

S Schulz, MA Caro, C Coughlan, EP O'Reilly - Physical Review B, 2015 - APS
We present an atomistic description of the electronic and optical properties of In 0.25 Ga
0.75 N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy …

Nanometer scale spectral imaging of quantum emitters in nanowires and its correlation to their atomically resolved structure

LF Zagonel, S Mazzucco, M Tencé, K March… - Nano …, 2011 - ACS Publications
We report the spectral imaging in the UV to visible range with nanometer scale resolution of
closely packed GaN/AlN quantum disks in individual nanowires using an improved custom …