Eliminating light-induced degradation in commercial p-type Czochralski silicon solar cells
This paper discusses developments in the mitigation of light-induced degradation caused by
boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid …
boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid …
24.58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design
D Chen, Y Chen, Z Wang, J Gong, C Liu, Y Zou… - Solar Energy Materials …, 2020 - Elsevier
We demonstrate an “industrial tunnel oxide passivated contacts”(i-TOPCon) silicon solar cell
on large area n-type silicon wafers (156.75 mm× 156.75 mm). This cell has a boron diffused …
on large area n-type silicon wafers (156.75 mm× 156.75 mm). This cell has a boron diffused …
Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review
A key strategy for further reducing the cost of solar electricity is through the development and
production of very-high efficiency silicon solar cells (> 25%). The challenge in achieving this …
production of very-high efficiency silicon solar cells (> 25%). The challenge in achieving this …
Engineering Solutions and Root-Cause Analysis for Light-Induced Degradation in p-Type Multicrystalline Silicon PERC Modules
K Nakayashiki, J Hofstetter… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
We identify two engineering solutions to mitigate light-induced degradation (LID) in p-type
multicrystalline silicon passivated emitter and rear cells, including modification of …
multicrystalline silicon passivated emitter and rear cells, including modification of …
Understanding the light‐induced degradation at elevated temperatures: Similarities between multicrystalline and floatzone p‐type silicon
This paper discusses degradation phenomena in crystalline silicon. We present new
investigations of the light‐and elevated temperature‐induced degradation of multicrystalline …
investigations of the light‐and elevated temperature‐induced degradation of multicrystalline …
[HTML][HTML] Hydrogen-induced degradation: Explaining the mechanism behind light-and elevated temperature-induced degradation in n-and p-type silicon
Light-and elevated temperature-induced degradation (LeTID) has been extensively studied
on p-type silicon materials with increasing evidence suggesting the involvement of …
on p-type silicon materials with increasing evidence suggesting the involvement of …
[HTML][HTML] Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
In this paper, we present new insight in the degradation and subsequent recovery of charge
carrier lifetime upon light soaking at 75 C observed in float-zone silicon wafers. Variations of …
carrier lifetime upon light soaking at 75 C observed in float-zone silicon wafers. Variations of …
Modulation of carrier‐induced defect kinetics in multi‐crystalline silicon PERC cells through dark annealing
In this letter, we report on significant changes caused after dark annealing to the kinetics of
the carrier‐induced defect, present in p‐type multi‐crystalline silicon PERC cells. The …
the carrier‐induced defect, present in p‐type multi‐crystalline silicon PERC cells. The …
Development of advanced hydrogenation processes for silicon solar cells via an improved understanding of the behaviour of hydrogen in silicon
The understanding and development of advanced hydrogenation processes for silicon solar
cells are presented. Hydrogen passivation is incorporated into virtually all silicon solar cells …
cells are presented. Hydrogen passivation is incorporated into virtually all silicon solar cells …
Advanced hydrogenation of dislocation clusters and boron-oxygen defects in silicon solar cells
Advanced hydrogenation processes targeting the generation of neutrally charged hydrogen
(H°) are applied to passivate structural defects in seeded-cast quasi mono-crystalline silicon …
(H°) are applied to passivate structural defects in seeded-cast quasi mono-crystalline silicon …