Recent progress on group III nitride nanostructure-based gas sensors
Group III nitrides are attracting considerable attention as promising materials for a variety of
applications due to their wide bandgap, high electron mobility, high thermal stability, and …
applications due to their wide bandgap, high electron mobility, high thermal stability, and …
Threshold and surface potential-based sensitivity analysis of symmetrical double gate AlGaN/GaN MOS-HEMT including capacitance effects for label-free biosensing
P Sriramani, N Mohankumar, Y Prasamsha… - Physica …, 2023 - iopscience.iop.org
This paper presents an analytical framework, based on the surface potential for a
symmetrical double-gate AlGaN/GaN Metal oxide semiconductor high electron mobility …
symmetrical double-gate AlGaN/GaN Metal oxide semiconductor high electron mobility …
Impact of AlN interlayer on the electronic and IV characteristics of In0. 17Al0. 83N/GaN HEMTs devices
Here, we study a simulation model of In 0.17 Al 0.83 N/GaN passivated high electron
mobility transistors (HEMTs) on SiC substrate. The research focused systematically on the …
mobility transistors (HEMTs) on SiC substrate. The research focused systematically on the …