The decreasing sizes in complementary metal oxide semiconductor (CMOS) transistor
technology require the replacement of SiO2 with gate dielectrics that have a high dielectric …

Zinc oxide (ZnO) film was deposited on p-type InP substrate by means of radio frequency
magnetron sputtering technique and thus the Au/ZnO/p-InP (MOS) structure was fabricated …

The energy distribution profile of the interface states (Nss) and their relaxation time (τ) and
capture cross section (σp) of metal–insulator–semiconductor (Al/SiO2/p-Si) Schottky diodes …

In order to good interpret the experimentally observed Au/n-Si (metal–semiconductor)
Schottky diodes with thin insulator layer (18Å) parameters such as the zero-bias barrier …

The forward and reverse bias I–V, C–V, and G/ω–V characteristics of (Ni/Au) Schottky barrier
diodes (SBDs) on the Al0. 22Ga0. 78N/AlN/GaN high-electron-mobility-transistor (HEMTs) …

Solid phase epitaxially grown GeSn was employed as the platform to assess the eligibility of
direct O2 plasma treatment on GeSn surface for passivation of GeSn N-MOSFETs. It has …

In this work, Al/p-Si structures with (ZnFe 2 O 4− PVA) interfacial film, which is grown by the
electrospinning-method, have been analyzed by using impedance measurements in the …

Abstract Mixed ZnO‐ZrO2 films have been obtained by sol‐gel technology. By using spin
coating method, the films were deposited on Si and glass substrates. The influence of …

A comprehensive probe was conducted to compare the impact of postdeposition annealing
at 700° C in different ambient of nitrogen–oxygen–nitrogen (NON), forming gas–oxygen …

Formation of ZrO2 by simultaneous thermal oxidation and nitridation in nitrous oxide of
sputtered Zr on Si substrate is reported here for the first time. Sputtered Zr on Si substrate …