III-Nitride nanowire optoelectronics

S Zhao, HPT Nguyen, MG Kibria, Z Mi - Progress in Quantum Electronics, 2015‏ - Elsevier
Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-based solar cells

Y Zhao, M Xu, X Huang, J Lebeau, T Li, D Wang… - Materials Today …, 2023‏ - Elsevier
III-nitride InGaN material is an ideal candidate for the fabrication of high performance
photovoltaic (PV) solar cells, especially for high-temperature applications. Over the past …

Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron-and hole-blocking layers

X Huang, H Chen, H Fu, I Baranowski, J Montes… - Applied Physics …, 2018‏ - pubs.aip.org
In this paper, we perform a comprehensive study on energy band engineering of InGaN
multi-quantum-well (MQW) solar cells using AlGaN electron-and hole-blocking layers …

III-nitride nanowires for solar light harvesting: A review

U Chatterjee, JH Park, DY Um, CR Lee - Renewable and Sustainable …, 2017‏ - Elsevier
The world needs economical and sustainable alternate energy sources to combat the
irreversible phenomenon like global warming. Solar photovoltaic technology, which converts …

Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency

X Huang, H Fu, H Chen, X Zhang, Z Lu… - Applied Physics …, 2017‏ - pubs.aip.org
We demonstrate the nonpolar and semipolar InGaN/GaN multiple-quantum-well (MQW)
solar cells grown on the nonpolar m-plane and semipolar (20 2 1) plane bulk GaN …

Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness

A Mukhtarova, S Valdueza-Felip, L Redaelli… - Applied Physics …, 2016‏ - pubs.aip.org
We investigate the photovoltaic performance of pseudomorphic In 0.1 Ga 0.9 N/GaN multiple-
quantum well (MQW) solar cells as a function of the total active region thickness. An …

Investigation of photovoltaic properties of single core–shell GaN/InGaN wires

A Messanvi, H Zhang, V Neplokh… - … Applied Materials & …, 2015‏ - ACS Publications
We report the investigation of the photovoltaic properties of core–shell GaN/InGaN wires.
The radial structure is grown on m-plane {11̅00} facets of self-assembled c̅-axis GaN …

[HTML][HTML] Excitation intensity and temperature-dependent performance of InGaN/GaN multiple quantum wells photodetectors

A Caria, C De Santi, E Dogmus, F Medjdoub, E Zanoni… - Electronics, 2020‏ - mdpi.com
In this article, we investigate the behavior of InGaN–GaN Multiple Quantum Well (MQW)
photodetectors under different excitation density (616 µW/cm2 to 7.02 W/cm2) and …

Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cells

M Miyoshi, T Tsutsumi, T Kabata, T Mori, T Egawa - Solid-State Electronics, 2017‏ - Elsevier
We investigated the effect of well layer thicknesses on the external quantum efficiency (EQE)
and energy conversion efficiency (ECE) for InGaN/GaN multiple quantum well (MQW) solar …

[HTML][HTML] Improved epilayer qualities and electrical characteristics for GaInN multiple-quantum-well photovoltaic cells and their operation under artificial sunlight and …

M Miyoshi, T Nakabayashi, K Yamamoto, P Dalapati… - AIP advances, 2021‏ - pubs.aip.org
GaInN-based photovoltaic (PV) devices are highly promising for application to optical
wireless power transmission (OWPT) systems as well as solar cells. This paper reports the …