A magnetic tunnel junction (MTJ), which consists of a thin insulating layer (a tunnel barrier)
sandwiched between two ferromagnetic electrode layers, exhibits tunnel magnetoresistance …

The existence of multiple ferroic orders in the same material and the coupling between them
have been known for decades. However, these phenomena have mostly remained the …

We comment on both recent progress and lingering puzzles related to research on magnetic
tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field …

We fabricated a quadruple-interface perpendicular magnetic tunnel junction (MTJ)(Quad-
MTJ) down to 33 nm using physical vapor-deposition, reactive ion etching, and damage …

Magnetic interlayer coupling is one of the central phenomena in spintronics. It has been
predicted that the sign of interlayer coupling can be manipulated by electric fields, instead of …

Recent advances in thin-film deposition techniques, such as molecular beam epitaxy and
pulsed laser deposition, have allowed for the manufacture of heterostructures with nearly …

In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the
spin drift–diffusion model to address the back-hop** effect. This issue manifests as …

A magnetic tunnel junction (MTJ), which consists of a thin insulating layer (a tunnel barrier)
sandwiched between two ferromagnetic electrode layers, exhibits tunneling …

Antiferromagnet spintronic devices eliminate or mitigate long-range dipolar fields, thereby
promising ultrafast operation. For spin transport electronics, one of the most successful …

We present cmtj—a simulation package for large-scale macrospin analysis of multilayer
spintronics devices. Apart from conventional simulations, such as magnetoresistance and …