Sub-10 nm two-dimensional transistors: Theory and experiment

R Quhe, L Xu, S Liu, C Yang, Y Wang, H Li, J Yang… - Physics Reports, 2021 - Elsevier
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

Two-dimensional transistors beyond graphene and TMDCs

Y Liu, X Duan, Y Huang, X Duan - Chemical Society Reviews, 2018 - pubs.rsc.org
Two-dimensional semiconductors (2DSCs) have attracted considerable attention as
atomically thin channel materials for field-effect transistors. Each layer in 2DSCs consists of …

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

DA Bandurin, AV Tyurnina, GL Yu… - Nature …, 2017 - nature.com
A decade of intense research on two-dimensional (2D) atomic crystals has revealed that
their properties can differ greatly from those of the parent compound,. These differences are …

Two-dimensional van der Waals ferroelectrics: Scientific and technological opportunities

M Wu - Acs Nano, 2021 - ACS Publications
Recent breakthroughs in two-dimensional (2D) van der Waals ferroelectrics have been
impressive, with a series of 2D ferroelectrics having been realized experimentally. The …

Two-dimensional tellurium: progress, challenges, and prospects

Z Shi, R Cao, K Khan, AK Tareen, X Liu, W Liang… - Nano-Micro Letters, 2020 - Springer
Since the successful fabrication of two-dimensional (2D) tellurium (Te) in 2017, its
fascinating properties including a thickness dependence bandgap, environmental stability …

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

Y Wang, S Liu, Q Li, R Quhe, C Yang… - Reports on Progress …, 2021 - iopscience.iop.org
Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide
interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal …

The role of traps in the photocurrent generation mechanism in thin InSe photodetectors

Q Zhao, W Wang, F Carrascoso-Plana, W Jie… - Materials …, 2020 - pubs.rsc.org
Due to the excellent electrical transport properties and optoelectronic performance, thin
indium selenide (InSe) has recently attracted attention in the field of 2D semiconducting …

Two-dimensional CIPS-InSe van der Waal heterostructure ferroelectric field effect transistor for nonvolatile memory applications

P Singh, S Baek, HH Yoo, J Niu, JH Park, S Lee - ACS nano, 2022 - ACS Publications
Channel current conduction modulation with the spontaneous polarization of ferroelectric
films in ferroelectric field-effect transistors (FeFETs) has been widely investigated. Low …

Wafer-scale synthesis of high-quality semiconducting two-dimensional layered InSe with broadband photoresponse

Z Yang, W Jie, CH Mak, S Lin, H Lin, X Yang, F Yan… - ACS …, 2017 - ACS Publications
Large-scale synthesis of two-dimensional (2D) materials is one of the significant issues for
fabricating layered materials into practical devices. As one of the typical III–VI …

Atomically thin hexagonal boron nitride and its heterostructures

J Zhang, B Tan, X Zhang, F Gao, Y Hu… - Advanced …, 2021 - Wiley Online Library
Atomically thin hexagonal boron nitride (h‐BN) is an emerging star of 2D materials. It is
taken as an optimal substrate for other 2D‐material‐based devices owing to its atomical …