GaN FinFETs and trigate devices for power and RF applications: Review and perspective

Y Zhang, A Zubair, Z Liu, M ** for vertical gallium nitride power devices: Materials challenges and recent progress
H Fu, K Fu, C Yang, H Liu, KA Hatch, P Peri… - Materials Today, 2021 - Elsevier
This paper reviews materials challenges and recent progress for selective area regrowth
and do** for vertical gallium nitride (GaN) power devices. The purpose is to realize …

Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments

S Luo, K Fu, Q ** of GaN toward high-power applications
RA Ferreyra, B Li, S Wang, J Han - Journal of Physics D: Applied …, 2023 - iopscience.iop.org
Selective area do** in GaN, especially p-type, is a critical and inevitable building block for
the realization of advanced device structures for high-power applications, including, but not …

Analysis of vertical GaN JBS and pn diodes by Mg ion implantation and ultrahigh-pressure annealing

SR Stein, D Khachariya, W Mecouch… - … on Electron Devices, 2023 - ieeexplore.ieee.org
We report on vertical GaN junction barrier Schottky (JBS) diodes formed by Mg ion
implantation and ultrahigh-pressure annealing (UHPA). The static ON-state characteristics of …

Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect

Z Liu, H Cao, X Tang, T Liu, Y Lu, Z Jiang… - Light: Science & …, 2025 - nature.com
The size of InGaN micro-LEDs is continuously decreasing to meet the demands of various
emerging applications, especially in tiny micro-displays such as AR/VR. However, the …

Study of AlGaN/GaN vertical superjunction HEMT for improvement of breakdown voltage and specific on-resistance

M Zhang, Z Guo, Y Huang, Y Li, J Ma, X **a… - IEEE …, 2021 - ieeexplore.ieee.org
A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a
composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve …