Analytical computation of electrical parameters in GAAQWT and CNTFET with identical configuration using NEGF method
ABSTRACT A two-dimensional quantum mechanical model is presented for calculating
carrier transport in ultra-thin gate-all-around quantum wire transistor (GAAQWT) and carbon …
carrier transport in ultra-thin gate-all-around quantum wire transistor (GAAQWT) and carbon …
Revealing quantum effects in highly conductive δ-layer systems
Thin, high-density layers of dopants in semiconductors, known as δ-layer systems, have
recently attracted attention as a platform for exploration of the future quantum and classical …
recently attracted attention as a platform for exploration of the future quantum and classical …
A novel high-performance CMOS VCRO based on electrically doped nanowire FETs in 10 nm node
In this paper, the idea of electrically doped (ED) Nano-scale TFETs is used to design a non-
tunneling n-type NWFET with an additional gate named the side-gate (SG). The work …
tunneling n-type NWFET with an additional gate named the side-gate (SG). The work …
Modeling of graphene-based field-effect transistors through a 1-D real-space approach
In this work, we present a computationally efficient approach for atomistic simulations of
graphene nanoribbon (GNR), bilayer graphene (BLG) and bilayer graphene nanoribbon …
graphene nanoribbon (GNR), bilayer graphene (BLG) and bilayer graphene nanoribbon …
Impact of high‐κ gate dielectric and other physical parameters on the electrostatics and threshold voltage of long channel gate‐all‐around nanowire transistor
High‐κ gate‐all‐around structure counters the Short Channel Effect (SCEs) mostly providing
excellent off‐state performance, whereas high mobility III–V channel ensures better on‐state …
excellent off‐state performance, whereas high mobility III–V channel ensures better on‐state …
CMOS ring oscillators based on do**-modified nanowire FETs: a novel design strategy
We present a new Step Doped Drain and Source Nanowire FET (NWFET) using do**
profile engineering to modify the energy band diagram. This transistor exhibits improved …
profile engineering to modify the energy band diagram. This transistor exhibits improved …
[HTML][HTML] Analysis of ballistic transport in nanoscale devices by using an accelerated finite element contact block reduction approach
H Li, G Li - Journal of Applied Physics, 2014 - pubs.aip.org
An accelerated Finite Element Contact Block Reduction (FECBR) approach is presented for
computational analysis of ballistic transport in nanoscale electronic devices with arbitrary …
computational analysis of ballistic transport in nanoscale electronic devices with arbitrary …
Switching Performance Analysis of III-V FinFETs
During the last decades, the field-effect transistor technology has changed at an amazing
rate and improved its performance gradually. Mostly utilized transistor technology has been …
rate and improved its performance gradually. Mostly utilized transistor technology has been …
Revealing quantum effects in highly conductive δ-layer systems
M Denis, JP Mendez, G Xujiao… - Communications …, 2021 - search.proquest.com
Thin, high-density layers of dopants in semiconductors, known as δ-layer systems, have
recently attracted attention as a platform for exploration of the future quantum and classical …
recently attracted attention as a platform for exploration of the future quantum and classical …
An atomistic Green's function method hybrid with a substructure technique for coherent phonon analysis
Y Gu, X Wu, X Ni - Numerical Heat Transfer, Part B: Fundamentals, 2016 - Taylor & Francis
By virtue of substructure technique, the atomistic Green's function method can be applied to
efficiently evaluate the coherent phonon transport in a large device. Comprised of several …
efficiently evaluate the coherent phonon transport in a large device. Comprised of several …