Structure, energetics, and electronic states of III–V compound polytypes
Recently several hexagonal polytypes such as 2H, 4H, and 6H have been discovered for
conventional III–V semiconductor compounds in addition to the cubic 3C zinc-blende …
conventional III–V semiconductor compounds in addition to the cubic 3C zinc-blende …
Atomic-scale variability and control of III-V nanowire growth kinetics
In the growth of nanoscale device structures, the ultimate goal is atomic-level precision. By
growing III-V nanowires in a transmission electron microscope, we measured the local …
growing III-V nanowires in a transmission electron microscope, we measured the local …
GaAs/GaP superlattice nanowires: growth, vibrational and optical properties
Nanowire geometry allows semiconductor heterostructures to be obtained that are not
achievable in planar systems, as in, for example, axial superlattices made of large lattice …
achievable in planar systems, as in, for example, axial superlattices made of large lattice …
Vapor–liquid–solid growth of semiconductor nanowires
VG Dubrovskii, F Glas - Fundamental properties of semiconductor …, 2021 - Springer
We discuss the growth of semiconductor nanowires, with an emphasis on the vapor–liquid–
solid growth of III–V nanowires. Special attention is paid to modeling of growth and the …
solid growth of III–V nanowires. Special attention is paid to modeling of growth and the …
Direct detection of spontaneous polarization in wurtzite GaAs nanowires
B Bauer, J Hubmann, M Lohr, E Reiger… - Applied Physics …, 2014 - pubs.aip.org
We demonstrate the direct detection of spontaneous polarization in the wurtzite crystal
phase of gallium-arsenide (GaAs) nanowires. Using differential phase contrast microscopy …
phase of gallium-arsenide (GaAs) nanowires. Using differential phase contrast microscopy …
Formation of wurtzite sections in self-catalyzed GaP nanowires by droplet consumption
Wurtzite GaP nanowires are interesting for the direct bandgap engineering and can be used
as templates for further growth of hexagonal Si shells. Most wurtzite GaP nanowires have …
as templates for further growth of hexagonal Si shells. Most wurtzite GaP nanowires have …
Theoretical consideration of III–V nanowire/Si triple-junction solar cells
L Wen, X Li, Z Zhao, S Bu, XS Zeng, J Huang… - …, 2012 - iopscience.iop.org
In this paper, we report theoretical consideration and simulation of a proposed III–V
nanowire (NW)/Si triple-junction solar cell. The cell consists of two axially connected III–V …
nanowire (NW)/Si triple-junction solar cell. The cell consists of two axially connected III–V …
Defect-free axially stacked GaAs/GaAsP nanowire quantum dots with strong carrier confinement
Axially stacked quantum dots (QDs) in nanowires (NWs) have important applications in
nanoscale quantum devices and lasers. However, there is lack of study of defect-free growth …
nanoscale quantum devices and lasers. However, there is lack of study of defect-free growth …
Phase transformation in radially merged wurtzite GaAs nanowires
III–V Nanowires (NWs) grown with metal–organic chemical vapor deposition commonly
show a polytypic crystal structure, allowing growth of structures not found in the bulk …
show a polytypic crystal structure, allowing growth of structures not found in the bulk …
Growth of defect-free GaP nanowires
The crystal structure of GaP nanowires grown by Au-assisted chemical beam epitaxy was
investigated as a function of group V flux and growth temperature. By increasing the …
investigated as a function of group V flux and growth temperature. By increasing the …