In this paper, we compare the performances of FinFETs, lateral gate-all-around (GAA) FETs,
and vertical GAAFETs (VFETs) at 7-nm node dimensions and beyond. Comparison is done …

The main aim of this work is to study the effect of symmetric and asymmetric spacer length
variations towards source and drain on n-channel SOI JL vertically stacked (VS) nanowire …

This work reports on vertical nanowire FET devices (VNWFETs) with a gate-all-around
(GAA) configuration, which offer new, promising opportunities to enable further CMOS …

Vertical nanowire logic circuits may enable device density scaling well beyond lateral CMOS
layouts limited by gate and contact placement. In this paper, we compared the performance …

In this paper, we report the performance of a novel circular double-gate (CDGT) silicon-on-
insulator metal oxide semiconductor field effect transistor (MOSFET). We explore a variety of …

In this paper, the thermal and electrical characteristics of a gate-all-around (GAA) vertical
nanoplate-shaped field-effect transistor (NPFET) are studied for sub-5-nm technologies …

In this paper, the main MOSFET parasitic capacitances of planar devices (ie, bulk, Fully
depleted silicon-on-insulator (FDSOI), and planar double gate) are computed using two …

This paper compares different types of Gate All Around (GAA) FET structures using TCAD
simulation, including Lateral Nanosheet, Lateral Nanowire, Vertical Nanosheet, and Vertical …

Nominal LG VFET-based RO may operate up to~ 60% faster than LFET-based RO at the
same energy per switch for both 7nm and 5nm technology nodes depending on the layout …

Nanosheet MOSFETs with circular layout geometry, ie Circular Nanosheet MOSFETs (C-
NSFETs) are explored using fully calibrated TCAD for High performance (HP) applications at …