Gallium nitride (GaN) based high elect mobility transistors (HEMTs) possess a multitude of
excellent characteristics, enabling them to overcome the performance limitations of …

Wurtzite GaN materials underpin many aspects of optoelectronic applications due to the
special tetrahedral-coordinated structure. Compared with three dimensional (3D) GaN, low …

The micro-and nanostructures of III-nitride semiconductors captivate strong interest owing to
their distinctive properties and myriad potential applications. Nevertheless, challenges …

High-electron-mobility transistors (HEMTs) are a promising device in the field of radio
frequency and wireless communication. However, to unlock the full potential of HEMTs, the …

The three-dimensionality of 3D GaN field-effect transistors (FETs) provides them with unique
advantages compared to their planar counterparts, introducing a promising path towards …

With the continuous miniaturization and integration of the semiconductor industry,
micro/nanoscale integrated photonics has received extensive attention as a key technology …

Independent and zero-maintenance systems would be in urgent need in the near future
internet of things. Here, we present high-performance, self-driven organic/inorganic …

Understanding piezotronic correlated carrier recombination behavior in quantum wells is
essential for their applications. In this work, we have studied the influence of piezotronics on …

Core–shell heterojunction structure is a feasible approach to optimize the optoelectronic
performance of devices by combining the advantages of different materials. In this work …

With the increasing global concern about energy consumption, self-driven photodetectors
are especially attractive. In this paper, we prepared high-performance self-driven single GaN …