Structurally different from conventional oxide ferroelectrics with rigid lattices, van der Waals
(vdW) ferroelectrics have stable layered structures with a combination of strong intralayer …

The past decade has witnessed dramatic progress related to various aspects of emergent
topological polar textures in oxide nanostructures displaying vortices, skyrmions, merons …

Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

In-memory computing (IMC) has emerged as a new computing paradigm able to alleviate or
suppress the memory bottleneck, which is the major concern for energy efficiency and …

Ferroelectric materials have been a focus of much research over the last few decades for
their unique piezoelectric and optoelectronic properties. Conventional solar cells have been …

Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for
potential applications in next‐generation memories, owing to attractive advantages such as …

Recently, 2D ferroelectrics have attracted extensive interest as a competitive platform for
implementing future generation functional electronics, including digital memory and brain …

Single crystals of BaTiO3 exhibit small switching fields and energies, but thin-film
performance is considerably worse, thus precluding their use in next-generation devices …

The ferroelectric-photovoltaic (FE-PV) device, in which a homogeneous ferroelectric material
is used as a light absorbing layer, has been investigated during the past several decades …

The capacitor is a key element of electronic devices and is characterized by positive
capacitance. However, a negative capacitance (NC) behaviour may occur in certain cases …