The interaction between light and matter is the fundamental aspect of many optoelectronic
applications. The efficiency of such devices is mainly dictated by the light emitting properties …

In the past two decades, group III-nitride-based ultraviolet light-emitting diodes (UV-LEDs)
and their applications have undergone a progressively accelerating development. This can …

Investigations of the mixtures of semiconducting quantum scale particles in anisotropic liquid
crystal (LC) medium have become a vibrant area of research primarily due to their very …

The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum
dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication …

This paper provides a brief overview on recent advances in tackling the do** and optical
polarization issues involved in the development of high performance deep ultraviolet (DUV) …

The process technologies of AlN growth by physical vapour transport are reviewed in this
paper with a focus on the growth parameters, crucible materials, and the type of …

Photocatalytic activity of pure TiO2 is limited to ultraviolet (UV) light due to the wide bandgap
of anatase and rutile phases. The bandgap of high-pressure phases of TiO2 can …

Control of interfacial physicochemical properties associated with device materials to
minimize the impact of point defects on device performance has been a dominant theme in …

Silicon is arguably the best electronic material, but it is not a good optoelectronic material.
By employing first-principles calculations and the cluster-expansion approach, we discover …

Most current phosphors available in the market for lighting applications produce light by
downconversion mechanisms. To demonstrate that upconversion materials are also able to …