Metal-ferroelectric-metal heterostructures with Schottky contacts. I. Influence of the
ferroelectric properties | Journal of Applied Physics | AIP Publishing Skip to Main Content …

High-performance lead-free thin-film capacitors deposited on the silicon (Si) wafers with
large energy storage density (W) and high reliability are strongly attractive in the modern …

In the present study, we have investigated the charge transport mechanism of the resistive
switching phenomenon of a write-once-read-many-times (WORM)-type memory device …

When the thin film of ZnS: Mn nanoparticles deposited on a glass substrate is elastically
deformed by applying a load, then initially the mechanoluminescence (ML) intensity …

The development of flexible electronics for wearable or implantable devices has become an
exciting research area in recent years. With the transition from rigid to flexible devices …

In this communication, we have tried to explain the experimental observation of the flow of
opposite charge carriers (electrons and holes) in a Write Once Read Many times (WORM) …

Modeling the current density–applied voltage (J–VA) characteristics of perovskite titanate-
based high dielectric constant high-K and ferroelectric thin film capacitors, and …

The sol–gel deposition method has been successfully applied to obtain Pb (Zr0. 2Ti0. 8) O3
thin films on platinized silicon wafers. Addition of different amounts (7–15 wt.%) of organic …

Dielectric capacitors are vital components in advanced electrical power systems due to their
high power density. However, how to improve their comparatively low energy density is still …

Carrier injection is the most common and critical issue which significantly affects the electric
breakdown strength (E b) of the dielectric films since the dielectric thin films usually work …