We analyze both experimentally (where possible) and theoretically from first principles the
dielectric tensor components and crystal structure of five classes of P bnm perovskites. All of …

The thermal stability of Dy Sc O 3 thin films in contact with Si O 2 or Hf O 2 during annealing
up to 1000 C has been studied. It is found that Dy Sc O 3∕ Si O 2 stacks react during …

Amorphous LaScO 3 thin films were grown on (100) Si by molecular beam deposition and
the effects of postdeposition thermal treatments on the film properties were studied after …

A series of 1.4, 1.8, and 4.0 nm thick HfO2 films deposited on Si (100) substrates have been
measured by extended X-ray absorption fine-structure prior to anneal processing, following …

Semiconductor devices and methods of manufacture thereof are disclosed. A preferred
embodiment comprises a method of forming an insulating material layer. The method …

Semiconductor devices and methods of manufacture thereof are disclosed. A preferred
embodiment comprises a method of forming an insulating material layer. The method …

We have examined the stability of TbScO 3 on Si (100) using medium energy ion scattering.
At high temperatures the dielectric decomposes into a Tb-rich silicate layer near the …

This thesis contains several applications of the first-principles electronic-structure theory with
special emphasis in parts of the thesis on the geometrical aspects of the theory. We start by …

In this work terbium scandate thin films have been deposited by atomic layer deposition
(ALD) on SiO 2/Si and Si 3 N 4/SiO 2/Si stacks and their structural and electrical behavior as …

Electron tunneling spectroscopy (ETS) was used to study amorphous La Al O 3 and La Sc O
3 thin film gate dielectrics for silicon metal-oxide-semiconductor structure. These gate …