Roadmap of terahertz imaging 2021
In this roadmap article, we have focused on the most recent advances in terahertz (THz)
imaging with particular attention paid to the optimization and miniaturization of the THz …
imaging with particular attention paid to the optimization and miniaturization of the THz …
Responsivity and NEP improvement of terahertz microbolometer by high-impedance antenna
The antenna-coupled microbolometer with suspended titanium heater and thermistor was
attractive as a terahertz (THz) detector due to its structural simplicity and low noise levels. In …
attractive as a terahertz (THz) detector due to its structural simplicity and low noise levels. In …
Terahertz Antenna Impedance Matched to a Graphene Photodetector
Develo** low-power, high-sensitivity photodetectors for the terahertz (THz) band that
operate at room temperature is an important challenge in optoelectronics. In this study, we …
operate at room temperature is an important challenge in optoelectronics. In this study, we …
Low-Frequency noise investigation of 1.09 μm GaAsBi laser diodes
J Glemža, V Palenskis, A Geižutis, B Čechavičius… - materials, 2019 - mdpi.com
GaAsBi is a suitable and very attractive material system to be used as an active layer in laser
diodes (LDs). To understand the performance and the reliability of such devices and also for …
diodes (LDs). To understand the performance and the reliability of such devices and also for …
Symmetric bow-tie diode for terahertz detection based on transverse hot-carrier transport
D Seliuta, J Vyšniauskas, K Ikamas… - Journal of Physics D …, 2020 - iopscience.iop.org
Room temperature terahertz detection based on the transverse transport of hot electrons in
symmetric bow-tie diode was demonstrated and studied in this work. More than an order of …
symmetric bow-tie diode was demonstrated and studied in this work. More than an order of …
Hyperbolic-tangent composition-graded InxGa1-xAs/GaAs (100) structures grown by molecular beam epitaxy
A Belio-Manzano, LI Espinosa-Vega… - Materials Science in …, 2022 - Elsevier
The molecular beam epitaxial growth and physical properties of In graded-composition
layers of InGaAs on GaAs (100) substrates varying nominal In concentration from 12 to 97 …
layers of InGaAs on GaAs (100) substrates varying nominal In concentration from 12 to 97 …
Gated bow-tie diode for microwave to sub-terahertz detection
S Ašmontas, M Anbinderis, A Čerškus, J Gradauskas… - Sensors, 2020 - mdpi.com
We propose a new design microwave radiation sensor based on a selectively doped
semiconductor structure of asymmetrical shape (so-called bow-tie diode). The novelty of the …
semiconductor structure of asymmetrical shape (so-called bow-tie diode). The novelty of the …
Photoluminescence emission in the red band at low temperatures in type-island layers of the Al0. 32Ga0. 68 As/Al0. 29Ga0. 71As/GaAs structure obtained via liquid …
Type-island layers for the Al 0.32 Ga 0.68 As/Al 0.29 Ga 0.71 As/GaAs structure were grown
on GaAs substrates at 600° C, via liquid phase epitaxy with a growth rate of 0.5° C/min for 4 …
on GaAs substrates at 600° C, via liquid phase epitaxy with a growth rate of 0.5° C/min for 4 …
Heteroestructuras epitaxiales metamórficas para el desarrollo de emisores terahertz
A Belio Manzano - REPOSITORIO NACIONAL …, 2024 - repositorioinstitucional.uaslp.mx
Dislocation generation due to lattice mismatch in heterostructures is an issue in the
development of new devices requiring exceptional crystalline quality. The particular …
development of new devices requiring exceptional crystalline quality. The particular …
[PDF][PDF] Low-Frequency Noise Investigation of 1.09 µm GaAsBi Laser Diodes
R Butkute, S Pralgauskaite, J Matukas - academia.edu
GaAsBi is a suitable and very attractive material system to be used as an active layer in laser
diodes (LDs). To understand the performance and the reliability of such devices and also for …
diodes (LDs). To understand the performance and the reliability of such devices and also for …