The increasing penetration of offshore wind power generation promotes the revolution of
wind turbine toward high-power application. The development of high-power wind turbine …

Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …

Power devices based on wide-bandgap material such as silicon carbide (SiC) can operate
at higher switching speeds, higher voltages, and higher temperatures compared to those …

Driving solutions for power semiconductor devices are experiencing new challenges since
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …

The future of power conversion at low-to-medium voltages (around 650 V) poses a very
interesting debate. At low voltages (below 100 V), the silicon (Si) MOSFET reigns supreme …

Based on the agency theory perspective and its corporate governance problem, the current
study investigated how control mechanisms affect firm financial performance with a special …

The trend in power electronic applications is to reach higher power density and higher
efficiency. Currently, the wide band-gap devices such as silicon carbide MOSFET (SiC …

The significant advance of power electronics in today's market is calling for high-
performance power conversion systems and MEMS devices that can operate reliably in …

The crosstalk voltage on the gate-source terminal of SiC power mosfets in a phase-leg
circuit is composed of the gate-drain capacitor introduced voltage and the common-source …

High di/dt and dv/dt of SiC MOSFET cause a considerable amount of overshoot in device
voltage and current during switching transients in the presence of inverter layout parasitic …