A GaN/InGaN double quantum well (DQW) gate structure was designed on a conventional
GaN-on-Si based AlGaN/GaN heterostructure. The electrical characteristics of the devices …

In this study, the structure of efficient recessed gate Metal Insulator Semiconductor High
Electron Mobility Transistor with Quaternary Barrier materials of Al 0.42 ln 0.03 Ga 0.55 N …

Here, we describe a systematic theoretical study of ScAlN/AlGaN/GaN heterostructures for
enhanced high-electron-mobility transistors (HEMTs). We have investigated the carrier …

A two-dimensional analytical model considering the polarization-induced charges and
defect-induced traps at all interfaces of the AlInGaN/AlInN High Electron Mobility Transistor …

In this paper, a theoretical study of N-polar GaN/Al x Ga 1-x N/GaN heterostructures is
conducted systematically. The dependence of two-dimensional hole gas (2DHG, at the …

Exhibiting extremely high electric polarization, N-polar Group III-nitrides heterostructure has
been widely used on high-electron-mobility transistors (HEMTs) and terahertz …

Using first-principles calculations based on density functional theory, we have systematically
studied the influence of in-plane lattice constant and thickness of slabs on the concentration …

In this paper,(InxAl1–xN/AlN) MQWs/InN/GaN heterostructure with a (InxAl1–xN/AlN) MQWs
barrier layer and an InN channel layer is presented. The numerical calculations of 2DEG …

In this paper, a theoretical study of p-GaN/Al x Ga 1-x N/GaN heterostructures is conducted
systematically. In order to efficiently deplete the two-dimensional electron gas (2DEG) at the …

In this paper, we propose and simulate a novel enhancement-mode InGaN/InAlN/GaN
HEMT. The influence of the layer thickness and In content of the InGaN cap as well as the …