A fully integrated CMOS tri-band ambient RF energy harvesting system for IoT devices
This article presents a fully integrated tri-band RF energy harvesting system (RFEH) in 65-
nm CMOS technology. The system is designed to harvest ambient RF energies at 900 MHz …
nm CMOS technology. The system is designed to harvest ambient RF energies at 900 MHz …
A 0.05 mm², 350 mv, 14 nw fully-integrated temperature sensor in 180-nm cmos
In this brief, we present a fully-integrated ring-oscillator based CMOS temperature sensor for
Internet-of-Things. Our design relies on a low-complexity PMOS-based sensing circuit to …
Internet-of-Things. Our design relies on a low-complexity PMOS-based sensing circuit to …
Static CMOS physically unclonable function based on 4T voltage divider with 0.6%–1.5% bit instability at 0.4–1.8 V operation in 180 nm
This article introduces a novel class of static and monostable CMOS physically unclonable
functions (PUFs) for hardware security applications. The PUF bitcell is based on a sub …
functions (PUFs) for hardware security applications. The PUF bitcell is based on a sub …
[HTML][HTML] MOSFET-Based Voltage Reference Circuits in the Last Decade: A Review
Voltage reference circuits are a basic building block in most integrated microsystems,
covering a wide spectrum of applications. Hence, they constitute a subject of great interest …
covering a wide spectrum of applications. Hence, they constitute a subject of great interest …
Ultralow voltage finFET-versus TFET-based STT-MRAM cells for IoT applications
Spin-transfer torque magnetic tunnel junction (STT-MTJ) based on double-barrier magnetic
tunnel junction (DMTJ) has shown promising characteristics to define low-power non-volatile …
tunnel junction (DMTJ) has shown promising characteristics to define low-power non-volatile …
A 0.3 nW, 0.093%/V line sensitivity, temperature compensated bulk-programmable voltage reference for wireless sensor nodes
I Bhattacharjee, G Chowdary - IEEE Transactions on Very Large …, 2022 - ieeexplore.ieee.org
A picowatt programmable CMOS-based voltage reference (VR) for wireless sensor nodes
(WSNs) is proposed in this work. It uses a pMOS current source and an nMOS current sink to …
(WSNs) is proposed in this work. It uses a pMOS current source and an nMOS current sink to …
A 23-pw nmos-only voltage reference with optimum body selection for process compensation
K Yu, Y Zhou, S Li, M Huang - IEEE Transactions on Circuits …, 2022 - ieeexplore.ieee.org
This brief presents an NMOS-only voltage reference with small process variations for ultra-
low-power applications. All MOSFETs work in the subthreshold region and are biased by the …
low-power applications. All MOSFETs work in the subthreshold region and are biased by the …
A family of current references based on 2T voltage references: Demonstration in 0.18-μm with 0.1-nA PTAT and 1.1-μA CWT 38-ppm/° C designs
The robustness of current and voltage references to process, voltage and temperature (PVT)
variations is paramount to the operation of integrated circuits in real-world conditions …
variations is paramount to the operation of integrated circuits in real-world conditions …
A 1.9 nW, sub-1 V, 542 pA/V linear bulk-driven OTA with 154 dB CMRR for bio-sensing applications
In this paper, a new technique for improvement on the DC voltage gain, while kee** the
high-linearity in symmetrical operational transconductance amplifier (OTA) bulk-driven (BD) …
high-linearity in symmetrical operational transconductance amplifier (OTA) bulk-driven (BD) …
pMOS‐only pW‐power voltage reference with sub‐10 ppm/° C trimmed temperature coefficient and sub‐100 ppm/V line sensitivity
In this paper, a new ultra‐low‐power voltage reference based on a two‐stage, all‐pMOS
topology operating in the subthreshold region is proposed to uniquely meet the pW‐power …
topology operating in the subthreshold region is proposed to uniquely meet the pW‐power …