A 23-pW NMOS-only voltage reference with optimum body selection for process compensation

K Yu, Y Zhou, S Li, M Huang - IEEE Transactions on Circuits …, 2022 - ieeexplore.ieee.org
This brief presents an NMOS-only voltage reference with small process variations for ultra-
low-power applications. All MOSFETs work in the subthreshold region and are biased by the …

A picowatt CMOS voltage reference operating at 0.5-V power supply with process and temperature compensation for low-power IoT systems

J Wang, X Sun, L Cheng - … on Circuits and Systems II: Express …, 2022 - ieeexplore.ieee.org
This brief presents a picowatt PVT-insensitive CMOS voltage reference with ultra-low supply
voltage. The core circuit of the proposed reference consists of three subthreshold-biased …

A fully integrated CMOS tri-band ambient RF energy harvesting system for IoT devices

JK Yong, WX Lian, H Ramiah… - … on Circuits and …, 2023 - ieeexplore.ieee.org
This article presents a fully integrated tri-band RF energy harvesting system (RFEH) in 65-
nm CMOS technology. The system is designed to harvest ambient RF energies at 900 MHz …

A 0.05 mm², 350 mv, 14 nw fully-integrated temperature sensor in 180-nm cmos

B Zambrano, E Garzón, S Strangio… - … on Circuits and …, 2021 - ieeexplore.ieee.org
In this brief, we present a fully-integrated ring-oscillator based CMOS temperature sensor for
Internet-of-Things. Our design relies on a low-complexity PMOS-based sensing circuit to …

A 0.3 nW, 0.093%/V line sensitivity, temperature compensated bulk-programmable voltage reference for wireless sensor nodes

I Bhattacharjee, G Chowdary - IEEE Transactions on Very Large …, 2022 - ieeexplore.ieee.org
A picowatt programmable CMOS-based voltage reference (VR) for wireless sensor nodes
(WSNs) is proposed in this work. It uses a pMOS current source and an nMOS current sink to …

[HTML][HTML] MOSFET-Based Voltage Reference Circuits in the Last Decade: A Review

E Moisello, E Bonizzoni, P Malcovati - Micromachines, 2024 - mdpi.com
Voltage reference circuits are a basic building block in most integrated microsystems,
covering a wide spectrum of applications. Hence, they constitute a subject of great interest …

Static CMOS physically unclonable function based on 4T voltage divider with 0.6%–1.5% bit instability at 0.4–1.8 V operation in 180 nm

M Vatalaro, R De Rose, M Lanuzza… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
This article introduces a novel class of static and monostable CMOS physically unclonable
functions (PUFs) for hardware security applications. The PUF bitcell is based on a sub …

A two-stage sub-threshold voltage reference generator using body bias curvature compensation for improved temperature coefficient

M Azimi, M Habibi, P Crovetti - Electronics, 2024 - mdpi.com
Leakage diodes cause deviations in the thermal drift of ultra-low-power two-transistor (2T)
reference circuits, resulting in either convex or concave output voltages against temperature …

A family of current references based on 2T voltage references: Demonstration in 0.18-μm with 0.1-nA PTAT and 1.1-μA CWT 38-ppm/° C designs

M Lefebvre, D Bol - IEEE Transactions on Circuits and Systems …, 2022 - ieeexplore.ieee.org
The robustness of current and voltage references to process, voltage and temperature (PVT)
variations is paramount to the operation of integrated circuits in real-world conditions …

Ultra-Low-Power Voltage References: Exploring picowatt-level design using CMOS and hybrid architectures

C Sawigun, X Yang, CM Lopez - IEEE Solid-State Circuits …, 2023 - ieeexplore.ieee.org
Voltage references (VRs) play a crucial role in the PMUs of electronic systems, providing a
stable voltage regardless of process variations, supply voltage fluctuations, and temperature …