[HTML][HTML] Prospects and challenges of energy storage materials: A comprehensive review
Energy storage technologies, which are based on natural principles and developed via
rigorous academic study, are essential for sustainable energy solutions. Mechanical …
rigorous academic study, are essential for sustainable energy solutions. Mechanical …
Accurate determination of the bandgap energy of the rare-earth niobate series
We report diffuse reflectivity measurements in InNbO4, ScNbO4, YNbO4, and eight rare-
earth niobates. A comparison with established values of the bandgap of InNbO4 and …
earth niobates. A comparison with established values of the bandgap of InNbO4 and …
Native defects association enabled room-temperature p-type conductivity in β-Ga2O3
The room temperature hole conductivity of the ultra-wide bandgap semiconductor β-Ga 2 O
3 is a pre-requisite for develo** the next-generation electronic and optoelectronic devices …
3 is a pre-requisite for develo** the next-generation electronic and optoelectronic devices …
Interfacial Properties of the SnO/κ-Ga2O3 pn Heterojunction: A Case of Subsurface Do** Density Reduction via Thermal Treatment in κ-Ga2O3
The interfacial properties of a planar SnO/κ-Ga2O3 p–n heterojunction have been
investigated by capacitance–voltage (C–V) measurements following a methodological …
investigated by capacitance–voltage (C–V) measurements following a methodological …
A strategy for enhancing interfacial thermal transport in Ga2O3-diamond composite structure by introducing an AlN interlayer
L Gu, Y Li, Y Shen, RY Yang, HP Ma, F yuan Sun… - Nano Energy, 2024 - Elsevier
Heat dissipation issues have emerged in power devices due to miniaturization and high
power density, particularly for materials like low-thermal-conductivity gallium oxide (Ga 2 O …
power density, particularly for materials like low-thermal-conductivity gallium oxide (Ga 2 O …
NiO/Ga2O3 Vertical Rectifiers of 7 kV and 1 mm2 with 5.5 A Forward Conduction Current
In this study, we present the fabrication and characterization of vertically oriented NiO/β
polymorph n-Ga2O3/n+ Ga2O3 heterojunction rectifiers featuring a substantial area of 1 …
polymorph n-Ga2O3/n+ Ga2O3 heterojunction rectifiers featuring a substantial area of 1 …
High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: a simulation study
We report high-performance E-mode HEMT with ultra-wide bandgap β-Ga 2 O 3 buffer using
numerical simulation. The proposed normally-off HEMT showed high breakdown …
numerical simulation. The proposed normally-off HEMT showed high breakdown …
[HTML][HTML] On the possible nature of deep centers in Ga2O3
The electric field dependence of emission rate of the deep traps with level near E c− 0.6 eV,
so-called E1 traps, was studied by means of deep level transient spectroscopy …
so-called E1 traps, was studied by means of deep level transient spectroscopy …
Mechanism for long photocurrent time constants in α-Ga2O3 UV photodetectors
AY Polyakov, AV Almaev, VI Nikolaev… - ECS Journal of Solid …, 2023 - iopscience.iop.org
Deep centers and their influence on photocurrent spectra and transients were studied for
interdigitated photoresistors on α-Ga 2 O 3 undoped semi-insulating films grown by Halide …
interdigitated photoresistors on α-Ga 2 O 3 undoped semi-insulating films grown by Halide …
The Effect of a Nucleation Layer on Morphology and Grain Size in MOCVD-Grown β-Ga2O3 Thin Films on C-Plane Sapphire
β-Ga2O3 thin films grown on widely available c-plane sapphire substrates typically exhibit
structural defects due to significant lattice and thermal expansion mismatch, which hinder …
structural defects due to significant lattice and thermal expansion mismatch, which hinder …