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[HTML][HTML] Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties
To date, it has remained challenging to achieve N-polar AlN, which is of great importance for
high power, high frequency, and high temperature electronics, acoustic resonators and …
high power, high frequency, and high temperature electronics, acoustic resonators and …
Wafer-scale N-polar GaN heterogeneous structure fabricated by surface active bonding and laser lift-off
N-polar Gallium nitride (GaN) technology is one of the most important technical routes for
millimeter-wave devices. This paper introduces a new approach based on reverse epitaxial …
millimeter-wave devices. This paper introduces a new approach based on reverse epitaxial …
Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and Optical Properties
To date, it has remained challenging to achieve N-polar AlN, which is of great importance for
high power, high frequency, and high temperature electronics, acoustic resonators and …
high power, high frequency, and high temperature electronics, acoustic resonators and …
Laser synthesis route for production of GaN nanocrystals for optical sensor protection
Gallium nitride is a well-known material in optoelectronic field due to its unique structure
properties which provide benefit including in optical limiting application. The limitation of …
properties which provide benefit including in optical limiting application. The limitation of …