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Fabrication technologies for the on‐chip integration of 2D materials
With compact footprint, low energy consumption, high scalability, and mass producibility,
chip‐scale integrated devices are an indispensable part of modern technological change …
chip‐scale integrated devices are an indispensable part of modern technological change …
Functional Nanomaterials from Waste and Low‐Value Natural Products: A Technological Approach Level
Low‐and negative‐value (waste) products represent a valuable resource. Its use as a
source for the fabrication of high value materials represents a lucrative pathway to …
source for the fabrication of high value materials represents a lucrative pathway to …
Origin of the double polarization mechanism in aluminum-oxide-passivated quasi-free-standing epitaxial graphene on 6H-SiC (0001)
K Pietak-Jurczak, J Gaca, A Dobrowolski… - ACS Applied …, 2024 - ACS Publications
In this work, we synthesize a 43 nm thick layer of amorphous Al2O3 on transfer-free p-type
hydrogen-intercalated quasi-free-standing (QFS) epitaxial chemical vapor deposition …
hydrogen-intercalated quasi-free-standing (QFS) epitaxial chemical vapor deposition …
Atomic Layer Deposition Growth and Characterization of Al2O3 Layers on Cu-Supported CVD Graphene
P Rafailov, V Mehandzhiev, P Sveshtarov, B Blagoev… - Coatings, 2024 - mdpi.com
The deposition of thin uniform dielectric layers on graphene is important for its successful
integration into electronic devices. We report on the atomic layer deposition (ALD) of Al2O3 …
integration into electronic devices. We report on the atomic layer deposition (ALD) of Al2O3 …
Al2O3 dielectric ceramic tapes containing hBN for applications on high-frequency substrates
PH Chibério, HPA Alves, RA Junior, JMD Neto… - Ceramics …, 2024 - Elsevier
In this study, we manufactured dielectric alumina (Al 2 O 3) ceramic tapes incorporated with
hexagonal boron nitride (hBN) for applications on high-frequency substrates. The ceramic …
hexagonal boron nitride (hBN) for applications on high-frequency substrates. The ceramic …
Strong do** reduction on wafer-scale CVD graphene devices via Al2O3 ALD encapsulation
We present the electrical characterization of wafer-scale graphene devices fabricated with
an industrially-relevant, contact-first integration scheme combined with Al 2 O 3 …
an industrially-relevant, contact-first integration scheme combined with Al 2 O 3 …
Self-extinguishing properties and fire-retardant applications of hexagonal boron nitride
Accidental fire causes severe concerns all around the world, resulting in loss of property,
damaged ecosystem, pollution, and loss of human life. Majority of the fire accidents are due …
damaged ecosystem, pollution, and loss of human life. Majority of the fire accidents are due …
Tunable Do** and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics
Two-dimensional materials (2DMs) have been widely investigated because of their potential
for heterogeneous integration with modern electronics. However, several major challenges …
for heterogeneous integration with modern electronics. However, several major challenges …
Fabrication methods for integrating 2D materials
D Moss - arxiv preprint arxiv:2201.00964, 2022 - arxiv.org
With compact footprint, low energy consumption, high scalability, and mass producibility,
chip-scale integrated devices are an indispensable part of modern technological change …
chip-scale integrated devices are an indispensable part of modern technological change …
Toward nonvolatile spin–orbit devices: Deposition of ferroelectric hafnia on monolayer graphene/Co/HM stacks
While technologically challenging, the integration of ferroelectric thin films with graphene
spintronics potentially allows the realization of highly efficient, electrically tunable …
spintronics potentially allows the realization of highly efficient, electrically tunable …