Fabrication technologies for the on‐chip integration of 2D materials

L Jia, J Wu, Y Zhang, Y Qu, B Jia, Z Chen… - Small …, 2022 - Wiley Online Library
With compact footprint, low energy consumption, high scalability, and mass producibility,
chip‐scale integrated devices are an indispensable part of modern technological change …

Functional Nanomaterials from Waste and Low‐Value Natural Products: A Technological Approach Level

I Levchenko, M Mandhakini, K Prasad… - Advanced Materials …, 2022 - Wiley Online Library
Low‐and negative‐value (waste) products represent a valuable resource. Its use as a
source for the fabrication of high value materials represents a lucrative pathway to …

Origin of the double polarization mechanism in aluminum-oxide-passivated quasi-free-standing epitaxial graphene on 6H-SiC (0001)

K Pietak-Jurczak, J Gaca, A Dobrowolski… - ACS Applied …, 2024 - ACS Publications
In this work, we synthesize a 43 nm thick layer of amorphous Al2O3 on transfer-free p-type
hydrogen-intercalated quasi-free-standing (QFS) epitaxial chemical vapor deposition …

Atomic Layer Deposition Growth and Characterization of Al2O3 Layers on Cu-Supported CVD Graphene

P Rafailov, V Mehandzhiev, P Sveshtarov, B Blagoev… - Coatings, 2024 - mdpi.com
The deposition of thin uniform dielectric layers on graphene is important for its successful
integration into electronic devices. We report on the atomic layer deposition (ALD) of Al2O3 …

Al2O3 dielectric ceramic tapes containing hBN for applications on high-frequency substrates

PH Chibério, HPA Alves, RA Junior, JMD Neto… - Ceramics …, 2024 - Elsevier
In this study, we manufactured dielectric alumina (Al 2 O 3) ceramic tapes incorporated with
hexagonal boron nitride (hBN) for applications on high-frequency substrates. The ceramic …

Strong do** reduction on wafer-scale CVD graphene devices via Al2O3 ALD encapsulation

K Dockx, MD Barnes, DJ Wehenkel, R van Rijn… - …, 2024 - iopscience.iop.org
We present the electrical characterization of wafer-scale graphene devices fabricated with
an industrially-relevant, contact-first integration scheme combined with Al 2 O 3 …

Self-extinguishing properties and fire-retardant applications of hexagonal boron nitride

D Maiya, A Chandra, RK Ameta, SS Mehetre - Hexagonal Boron Nitride, 2024 - Elsevier
Accidental fire causes severe concerns all around the world, resulting in loss of property,
damaged ecosystem, pollution, and loss of human life. Majority of the fire accidents are due …

Tunable Do** and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics

A Esteki, S Riazimehr, A Piacentini, H Knoops… - arxiv preprint arxiv …, 2024 - arxiv.org
Two-dimensional materials (2DMs) have been widely investigated because of their potential
for heterogeneous integration with modern electronics. However, several major challenges …

Fabrication methods for integrating 2D materials

D Moss - arxiv preprint arxiv:2201.00964, 2022 - arxiv.org
With compact footprint, low energy consumption, high scalability, and mass producibility,
chip-scale integrated devices are an indispensable part of modern technological change …

Toward nonvolatile spin–orbit devices: Deposition of ferroelectric hafnia on monolayer graphene/Co/HM stacks

S Lancaster, I Arnay, R Guerrero, A Gudín… - … Applied Materials & …, 2023 - ACS Publications
While technologically challenging, the integration of ferroelectric thin films with graphene
spintronics potentially allows the realization of highly efficient, electrically tunable …