Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

Experimental pulse length–pulse voltage studies of SrTiO3 memristive cells are reported,
which reveal nonlinearities in the switching kinetics of more than nine orders of magnitude …

We show that the SET operation of a unipolar memristor could be explained by
thermophoresis, or the Soret effect, which is the diffusion of atoms, ions or vacancies in a …

Ionics has been traditionally used for long-standing energy applications, 1, 2 ie, ion batteries
which rely on the ionic motion of either Li or Na; 3–10 solid oxide fuel cells based on the …

Neuromorphic architectures offer great promise for achieving computation capacities
beyond conventional Von Neumann machines. The essential elements for achieving this …

A 3D simulation of conductive nanofilaments (CNFs) in multilayer hexagonal-BN memristors
is performed. To do so, a simulation tool based on circuit breakers is developed including for …

Multilevel resistive switching in memristive devices is vital for applications in non-volatile
memory and neuromorphic computing. In this study, we report on the multilevel resistive …

A two-dimensional electron gas at the interfaces of perovskite oxides has unfolded various
emergent phenomena. In this work, we fabricate the conducting interface between La VO 3 …

In this work, we demonstrate that TiO 2− x based Resistive Random Access Memory devices
can function without an initial electroforming process and a wide range of switching ratios …

In this work, we investigate the effect of oxygen-enhanced TiO 2 thin films on the switching
dynamics of Pt/TiO 2/Pt memristive nanodevices. We demonstrate that such devices can be …