A highly sensitive graphene-based field effect transistor for the detection of myoglobin
BV Krsihna, A Gangadhar, S Ravi, D Mohan… - Silicon, 2022 - Springer
Biomedical applications adapt Nano technology-based transistors as a key component in
the biosensors for diagnosing life threatening diseases like Covid-19, Acute myocardial …
the biosensors for diagnosing life threatening diseases like Covid-19, Acute myocardial …
Implementation and performance evaluation of ferroelectric negative capacitance FET
With the constant increase in power dissipation of nanoscale transistors, the almost four-
decade-old cycle of performance advancement in complementary metal–oxide …
decade-old cycle of performance advancement in complementary metal–oxide …
Optimal design and performance analysis of vertically stacked nanosheet tunnel field effect transistor
Tunneling field effect transistors (TFETs) have been proposed as switches for low-power
integrated circuits. A negative-capacitance vertical-tunnel FET that improves vertical …
integrated circuits. A negative-capacitance vertical-tunnel FET that improves vertical …
Channel engineering assisted performance enhancement of metal gate sub-10nm ballistic SiNWFET for futuristic device applications
The progress in silicon technology has brought us metal oxide semiconductor (MOS)
manufacturing technologies with physical gate length of about 14 nanometers and …
manufacturing technologies with physical gate length of about 14 nanometers and …
Negative capacitance ferroelectric FET based on short channel effect for low power applications
The electrical properties of ferroelectric (Fe) FETs with Negative Capacitance (NC) have
been explored theoretically at temperatures ranging from-280 to+ 360 degrees Celsius …
been explored theoretically at temperatures ranging from-280 to+ 360 degrees Celsius …
Analysis and design of novel do** free silicon nanotube TFET with high-density meshing using ML for sub nanometre technology nodes
Beyond the 25 nm technological node, MOSFETs (metal oxide semiconductor FETs) have
worse channel electrostatic control than FinFETs (Fin field-effect transistors). It is necessary …
worse channel electrostatic control than FinFETs (Fin field-effect transistors). It is necessary …
Temperature influence on dielectric tunnel FET characterization and subthreshold characterization
VLSI technology is being developed to lower the size of semiconductor devices due to the
increasing importance of integrated circuits (ICs). Short channel effects, for example, make it …
increasing importance of integrated circuits (ICs). Short channel effects, for example, make it …
Tunnel field effect transistor design and analysis for biosensing applications
The physical modelling of the tunnel field effect transistor (TFET) is done in this study. The
Silvaco TCAD tool is used to design and simulate the TFET structure. The FET device has …
Silvaco TCAD tool is used to design and simulate the TFET structure. The FET device has …
Performance analysis of do** less nanotube tunnel field effect transistor for high speed applications
Abstract The DL-Si-NT-TFET (do**-free tunnelling Silicon Nanotube TFET) structure is
described in this article. In metals with adequate work functions, the Si-NT-TFET …
described in this article. In metals with adequate work functions, the Si-NT-TFET …
Design and analysis of junctionless FinFET with Gaussian doped for non-polar structure
Modern transistors have two metallurgical junctions, one at the source/channel region and
the other at the drain/channel region. A strong do** profile at these junctions is required to …
the other at the drain/channel region. A strong do** profile at these junctions is required to …