Germanium is being actively considered by the semiconductor community as a mainstream
material for nanoelectronic applications. Germanium has advantageous materials …

Diffusion and activation of n-type dopants in Ge are discussed with particular emphasis on
shallow junction formation. It is shown that both the increase of dopant diffusivity and the …

Diffusion experiments of phosphorus (P), arsenic (As), and antimony (Sb) in high purity
germanium (Ge) were performed at temperatures between 600 and 920 C⁠. Secondary ion …

The diffusion of self-atoms and n-type dopants such as phosphorus, arsenic, and antimony
in germanium was studied by means of isotopically controlled multilayer structures doped …

Electronic structure calculations are used to study the stability, concentration, and migration
of vacancy-donor (phosphorus, arsenic, and antimony) complexes in germanium, in the …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

Recent experimental studies demonstrate a significant germanium (Ge) substrate loss and
consequently dopant loss even during low temperature annealing. Additionally, for …

The controlled do** of germanium by ion implantation is a process which requires basic
research before optimization. For this reason, we have experimentally studied by …

The in situ n-type do** of Ge thin films epitaxial grown on Si substrates is limited to 1× 10
19 cm− 3 by the phosphorous out-diffusion during growth at 600 C. By studying the …

Some unresolved issues with respect to diffusion and activation of n-type ion-implanted
dopants in germanium and of particular interest for shallow junction formation are pointed …