The aim of this review paper is to describe the impact of so-called border traps (BTs) in high-
k gate oxides on the operation and reliability of high-mobility channel transistors. First, a …

Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …

This paper reports on gate-all-around silicon nanowire field-effect transistors (FETs) built in
a lateral configuration, which represent the ultimate scaling limit of triple-gate finFET devices …

The development of the internet-of-things requires cheap, light, small and reliable true
random number generator (TRNG) circuits to encrypt the data—generated by objects or …

Memristor‐based electronic memory have recently started commercialization, although its
market size is small (~ 0.5%). Multiple studies claim their potential for hardware …

With technology in deep nano scale, the susceptibility of transistors to various aging
mechanisms such as Negative/Positive Bias Temperature Instability (NBTI/PBTI) and Hot …

This study examined the electrical performance of bilayer channel InGaZnO: H/InGaZnO thin-
film transistors (TFTs). The field-effect mobility and bias stress stability of the InGaZnO device …

Much progress has been made in the nanoscale analysis of nanostructures, while the
map** of key charge transport properties such as a carrier mobility remains a challenge …

Following their first observation in 1984, random telegraph signals (RTSs) were initially a
purely scientific tool to study fundamental aspects of defects in semiconductor devices. As …

A normally-OFF p-GaN gate AlGaN/GaN high-electron-mobility transistor with high on-state
resistance (RON) uniformity was realized using a self-terminated digital etching technique …