The main bottleneck in obtaining high‐performance thermoelectric (TE) materials is
identified as how to decouple the strong interrelationship between electrical and thermal …

The Au nanostructures have been coated with an ultra-thin films of amorphous aluminium
oxide. Optical absorption spectra show the influence of the thickness of Al 2 O 3 on plasmon …

The deposition of thin uniform dielectric layers on graphene is important for its successful
integration into electronic devices. We report on the atomic layer deposition (ALD) of Al2O3 …

Nanoscale films are integral to all modern electronics. To optimize device performance,
researchers vary the film thickness by making batches of devices, which is time‐consuming …

Al 2 O 3 thin films with thickness between 2 and 100 nm were synthetized at 250° C by
thermal atomic layer deposition on silicon substrates. Characterizations of as-deposited and …

Functional thin films play a critical role in efforts toward efficient devices for energy
conversion and storage, as well as low-loss electronics. These films need to be …

Abstract Aluminium oxide (Al 2 O 3) films were deposited on silicon substrates using plasma-
enhanced atomic layer deposition (PE-ALD) technique with tri-methyl-aluminium TMA (Al …

Photonic materials for high-temperature applications need to withstand temperatures usually
higher than 1000° C, whilst kee** their function. When exposed to high temperatures …

High‐quality, alumina thin films are extensively used as dielectrics, passivation layers, and
barrier layers in electronics and many other applications. However, to achieve optimum …

In this work,(Al x Ga 1− x) 2 O 3 thin films were grown on a 4H-SiC substrate by radio
frequency (RF) sputtering.(Al x Ga 1− x) 2 O 3 targets with different nominal Al content xt: 0 …