With the demand for increasingly smaller feature sizes, extreme ultraviolet (EUV) lithography
has become the cutting-edge technology for fabricating highly miniaturized integrated …

Nonchemically amplified resists based on triphenyl sulfonium triflate-modified polystyrene
(PSTS) were prepared by a facile method of modification of polystyrene with sulfonium …

A regioselective C–H sulfanylation of aryl sulfoxides with alkyl aryl sulfides in the presence
of acid anhydride was developed, which resulted in the formation of 1, 4-disulfanylarenes …

Given the need for a next-generation technology node in the area of integrated circuits (ICs),
improvement in the properties of resist materials, particularly sensitivity (ED), resolution …

Inorganic resists have emerged as promising candidates in semiconductor industries to
realize sub-10 nm node technology. However, controlling vertical shrinkage of resist films …

Molecular layer deposition (MLD) of metal oxide and organic hybrid thin films has great
potential to be utilized in extreme ultraviolet photoresist, thanks to its excellent uniformity on …

Nonchemically amplified resists (n-CARs) based on oxime sulfonate-functionalized
polystyrene (PSOS) were designed and prepared. The component ratios of the oxime …

Due to advantages of short exposure wavelength (13.5 nm) and high patterning resolution,
extreme ultraviolet (EUV) lithography is the state-of-the-art technology to break through the 3 …

Although many organic polymer based photoresists are useful for patterning high resolution
sub-20 nm technology nodes, many such resists suffer from poor sensitivity. One of the …

Biobased epoxy resins have received widespread attention due to their substitution for
petroleum-based ones in conventional fields but are rarely reported in functional materials …