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Stability, reliability, and robustness of GaN power devices: A review
Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …
form factor of power electronics. However, the material composition, architecture, and …
Degradation and recovery of GaN HEMTs in overvoltage hard switching near breakdown voltage
GaN high electron mobility transistors (HEMTs) have limited avalanche capability and
usually fail catastrophically in voltage overshoot up to their dynamic breakdown voltage (BV …
usually fail catastrophically in voltage overshoot up to their dynamic breakdown voltage (BV …
Evaluation and MHz Converter Application of 1.2-kV Vertical GaN JFET
The 1.2 kV vertical GaN fin-channel junction field-effect transistor (JFET) is an emerging
industrial device with low specific on-resistance (R ON), normally-off operation, and …
industrial device with low specific on-resistance (R ON), normally-off operation, and …
Evaluation of Dynamic RON, Coss Loss, and Short-Circuit Ruggedness of 650V and 1200V Industrial Vertical GaN JFETs
Dynamic on-resistance R_ON, hysteresis output capacitance (Coss) loss, and short-circuit
(SC) capability are three crucial reliability and robustness concerns facing many GaN high …
(SC) capability are three crucial reliability and robustness concerns facing many GaN high …
Switching performance evaluation of 650 V vertical GaN fin JFET
This work reports the first switching performance characterization of a 650 V NexGen's
Vertical GaN TM fin-channel junction field effect transistor (Fin-JFET) fabricated on 4-inch …
Vertical GaN TM fin-channel junction field effect transistor (Fin-JFET) fabricated on 4-inch …
Exceptional repetitive-short-circuit robustness of vertical GaN fin-JFET at high voltage
The limited short circuit (SC) capability of GaN high-electron-mobility transistors (HEMTs)
has become a critical concern for their adoption in many power applications. Recently …
has become a critical concern for their adoption in many power applications. Recently …
Switching of a bus voltage of 1400 V at 10 MHz using vertical GaN Fin-JFETs
A Edwards, V Padilla, C Drowley… - … Devices and ICs …, 2023 - ieeexplore.ieee.org
The fast-switching performance results of a 1200 V rated normally-off vertical GaN Fin-JFET
are presented in this paper. A compact SPICE model which predicts its DC and dynamic …
are presented in this paper. A compact SPICE model which predicts its DC and dynamic …
Compact Modeling of Power GaN Fin-JFETs IV Characteristics using ASM-HEMT Model
In this paper, we analyse and precisely model the current-voltage (IV) characteristics of
Vertical GaN Fin-JFETs for operation temperatures of T= 25° C, 100° C and 200° C. To the …
Vertical GaN Fin-JFETs for operation temperatures of T= 25° C, 100° C and 200° C. To the …
Surge-energy and Overvoltage Robustness of Cascode GaN Power Transistors
Q Song - 2022 - vtechworks.lib.vt.edu
Surge-energy robustness is essential for power devices in many applications such as
automotive powertrains and electricity grids. While Si and SiC MOSFETs can dissipate surge …
automotive powertrains and electricity grids. While Si and SiC MOSFETs can dissipate surge …