Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …

In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …

Solar water splitting is one of the key steps in artificial photosynthesis for future carbon-
neutral, storable and sustainable source of energy. Here we show that one of the major …

A comprehensive energy map as a function of AlGaN composition over the whole alloy
range is presented for commonly observed point defects in nominally intrinsic, n‐, and p …

We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based
electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors …

A theoretical framework for a general approach to reduce point defect density in materials
via control of defect quasi Fermi level (dQFL) is presented. The control of dQFL is achieved …

A defect quasi Fermi level (dQFL) control process based on above bandgap illumination
was applied to control H and V N-complexes, which are the main contributors to the …

The formation of intrinsic point defects in the N-sublattice of semi-insulating Mg-doped GaN
crystals grown by the ammonothermal method (SI AT GaN: Mg) was investigated for the first …

The high acceptor ionization energy and, thus, low carrier concentration in p-type III-nitride
have widely been recognized as the bottleneck preventing the development of high …

In this paper we show that the surface Fermi level of Ga-polar GaN exhibits a bistable
behavior allowing it to be located at two distinct energetic positions at the air/GaN interface …