The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

Abstract Two-dimensional (2D) materials could potentially be used to develop advanced
monolithic integrated circuits. However, despite impressive demonstrations of single devices …

Graphene nanoribbons (GNRs) are a family of one-dimensional (1D) materials with a
graphitic lattice structure. GNRs possess high mobility and current-carrying capability …

Rapid digital technology advancement has resulted in a tremendous increase in computing
tasks imposing stringent energy efficiency and area efficiency requirements on next …

The co-integration of logic switches and neuromorphic functions could be used to create
new computing architectures with low power consumption and novel functionalities. Two …

Aligned semiconducting carbon nanotubes are a potential alternative to silicon in the
creation of scaled field-effect transistors (FETs) due to their easy miniaturization and high …

Complementary metal–oxide–semiconductor (CMOS) logic circuits at their ultimate scaling
limits place extreme demands on the properties of all materials involved. The requirements …

The shrinking of transistors has hit a wall of material degradation and the specialized
electronic applications for complex scenarios have raised challenges in heterostructures …

The discovery of two‐dimensional (2D) materials with unique electronic, superior
optoelectronic, or intrinsic magnetic order has triggered worldwide interest in the fields of …

Reconfigurable logic and neuromorphic devices are crucial for the development of high-
performance computing. However, creating reconfigurable devices based on conventional …