GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
[HTML][HTML] Trap** phenomena and degradation mechanisms in GaN-based power HEMTs
This paper reports an overview of the most relevant trap** and degradation mechanisms
that limit the performance and lifetime of GaN-based transistors for application in power …
that limit the performance and lifetime of GaN-based transistors for application in power …
Vertical GaN MOSFET power devices
Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high
critical electric field, robust antiradiation properties, and a high saturation velocity for high …
critical electric field, robust antiradiation properties, and a high saturation velocity for high …
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs
In this letter, we report a detailed experimental investigation of the time-dependent
breakdown induced by forward gate stress in GaN-based power HEMTs with a p-type gate …
breakdown induced by forward gate stress in GaN-based power HEMTs with a p-type gate …
Fluorine-implanted termination for vertical GaN Schottky rectifier with high blocking voltage and low forward voltage drop
S Han, S Yang, K Sheng - IEEE Electron Device Letters, 2019 - ieeexplore.ieee.org
In this letter, fluorine-implanted termination (FIT) has been demonstrated in vertical GaN-on-
GaN Schottky barrier diodes (SBDs). Owing to the unique feature of F ions that can become …
GaN Schottky barrier diodes (SBDs). Owing to the unique feature of F ions that can become …
Beveled Fluoride Plasma Treatment for Vertical -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage
Z Hu, Y Lv, C Zhao, Q Feng, Z Feng… - IEEE Electron …, 2020 - ieeexplore.ieee.org
In this letter, we report on demonstrating a high performance vertical β-Ga 2 O 3 Schottky
barrier diode (SBD) based on a self-aligned beveled fluorine plasma treatment (BFPT) edge …
barrier diode (SBD) based on a self-aligned beveled fluorine plasma treatment (BFPT) edge …
Characterization and modeling of 2DEG mobility in AlGaN/AlN/GaN MIS-HEMT
I Nifa, C Leroux, A Torres, M Charles… - Microelectronic …, 2019 - Elsevier
We present a detailed study of the process influence on two-dimensional electron gas
(2DEG) transport properties in Al 0.25 Ga 0.75 N/AlN/GaN heterostructure. Hall effect …
(2DEG) transport properties in Al 0.25 Ga 0.75 N/AlN/GaN heterostructure. Hall effect …
Time-dependent threshold voltage instability mechanisms of p-GaN gate AlGaN/GaN HEMTs under high reverse bias conditions
S Li, Z He, R Gao, Y Chen, Y Chen… - … on Electron Devices, 2020 - ieeexplore.ieee.org
In this article, we experimentally investigate the degradation mechanisms of GaN high-
electron mobility transistors (HEMTs) with p-type gate during long-term hightemperature …
electron mobility transistors (HEMTs) with p-type gate during long-term hightemperature …
Gate stability of GaN-based HEMTs with p-type gate
M Meneghini, I Rossetto, V Rizzato, S Stoffels… - Electronics, 2016 - mdpi.com
This paper reports on an extensive investigation of the gate stability of GaN-based High
Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on …
Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on …
Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO as Gate Dielectric
In this letter, we report optimized transport properties in gate recessed enhancement-mode
GaN MOS-HEMTs by incorporating silicon into atomic layer deposited gate dielectric HfO 2 …
GaN MOS-HEMTs by incorporating silicon into atomic layer deposited gate dielectric HfO 2 …