Chirality-dependent electrical transport properties of carbon nanotubes obtained by experimental measurement

W Su, X Li, L Li, D Yang, F Wang, X Wei… - Nature …, 2023 - nature.com
Establishing the relationship between the electrical transport properties of single-wall
carbon nanotubes (SWCNTs) and their structures is critical for the design of high …

Carbon-nanotube–electrolyte interface: quantum and electric double layer capacitance

J Li, PHQ Pham, W Zhou, TD Pham, PJ Burke - ACS nano, 2018 - ACS Publications
We present a comprehensive study of the electrochemical capacitance between a one-
dimensional electronic material and an electrolyte. In contrast to a conventional, planar …

Suppression of leakage current in carbon nanotube field-effect transistors

L Xu, C Qiu, L Peng, Z Zhang - Nano Research, 2021 - Springer
Carbon nanotube field-effect transistor (CNT FET) has been considered as a promising
candidate for future high-performance and low-power integrated circuits (ICs) applications …

Ultra‐Strong Comprehensive Radiation Effect Tolerance in Carbon Nanotube Electronics

M Zhu, P Lu, X Wang, Q Chen, H Zhu, Y Zhang, J Zhou… - Small, 2023 - Wiley Online Library
Carbon nanotube (CNT) field‐effect transistors (FETs) have been considered ideal building
blocks for radiation‐hard integrated circuits (ICs), the demand for which is exponentially …

Capacitance of graphene nanoribbons

AA Shylau, JW Kłos, IV Zozoulenko - Physical Review B—Condensed Matter …, 2009 - APS
We present an analytical theory for the gate electrostatics and the classical and quantum
capacitance of the graphene nanoribbons (GNRs) and compare it with the exact self …

Electrochemical enhancement of optoelectronic performance of transparent and conducting single-walled carbon nanotube films

DS Kopylova, DA Satco, EM Khabushev, AV Bubis… - Carbon, 2020 - Elsevier
We propose a novel approach to enhance optoelectronic performance of single-walled
carbon nanotubes (SWCNTs) for transparent conducting film applications. The method …

Heavy ion displacement damage effect in carbon nanotube field effect transistors

P Lu, M Zhu, P Zhao, C Fan, H Zhu, J Gao… - … Applied Materials & …, 2023 - ACS Publications
Recent advances in carbon nanotube (CNT)-based integrated circuits have shown their
potential in deep space exploration. In this work, the mechanism governing the heavy-ion …

Measurement of the combined quantum and electrochemical capacitance of a carbon nanotube

J Li, PJ Burke - Nature communications, 2019 - nature.com
The nature of the electronic interface between a nanotube and solvated ions in a liquid
electrolyte is governed by two distinct physical phenomena: quantum and chemical. The …

Analytical ballistic theory of carbon nanotube transistors: Experimental validation, device physics, parameter extraction, and performance projection

D Akinwande, J Liang, S Chong, Y Nishi… - Journal of Applied …, 2008 - pubs.aip.org
We developed a fully analytical ballistic theory of carbon nanotube field effect transistors
enabled by the development of an analytical surface potential capturing the temperature …

Heterodyne High-Harmonic Electrostatic Force Microscopy with Improved Spatial Resolution for Nanoscale Identification of Metallic/Semiconducting Carbon …

K Xu, Y **e, S Ma, Q Liang, Z Shi - ACS Applied Materials & …, 2024 - ACS Publications
There are two main types of carbon nanotubes (CNTs): metallic and semiconducting.
Naturally grown CNTs are randomly distributed, posing challenges in distinguishing …