The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum
dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication …

We apply perturbative effective mass theory as a broadly applicable theoretical model for
quantum confinement (QC) in all Si and Ge nanostructures including quantum wells (QWs) …

Low-dimensional nanostructures have many advantages when used in sensors compared
to the traditional bulk materials, in particular in their sensitivity and specificity. In such …

A detailed comparison of continuum and valence force field strain calculations in quantum-
dot structures is presented with particular emphasis to boundary conditions, their …

This Tutorial provides a comprehensive overview of various k⋅ p models used to describe
the electronic band structures of semiconductors with cubic diamond and zinc blende …

Self-assembled Ge quantum dots were formed by in-situ thermal annealing of a thin
amorphous Ge layer deposited by molecular beam epitaxy either on a thin porous TiO2 …

We develop a complete Fourier transform k· p method and present its application for a
theoretical investigation on electronic structures of quantum dots with consideration of the …

To eliminate spurious solutions in the multiple-band k· p theory, we developed the Fourier
transform-based k· p approach through combining the Fourier transform technique with Burt …

The structural inversion asymmetry-induced spin–orbit interaction of conduction band
electrons in zinc-blende and wurtzite semiconductor structures is analysed allowing for a …

We present a systematic investigation of calculating quantum dots (QDs) energy levels using
the finite element method in the frame of the eight-band k· p method. Numerical results …