A Review on the Properties and Applications of WO3 Nanostructure-Based Optical and Electronic Devices
Y Yao, D Sang, L Zou, Q Wang, C Liu - Nanomaterials, 2021 - mdpi.com
Tungsten oxide (WO3) is a wide band gap semiconductor with unintentionally n-do**
performance, excellent conductivity, and high electron hall mobility, which is considered as a …
performance, excellent conductivity, and high electron hall mobility, which is considered as a …
Manifestation on the choice of a suitable combination of MIS for proficient Schottky diodes for optoelectronics applications: A comprehensive review
In this review, we explore the last fifty years of Metal-Insulator-Semiconductor (MIS) Schottky
barrier diode research, highlighting a surge in interest in tailored filaments for thin films …
barrier diode research, highlighting a surge in interest in tailored filaments for thin films …
High-performance self-powered ultraviolet photodetector based on PVK/amorphous-WO3 organic-inorganic heterojunction
M Jia, L Tang, KS Teng, Y Lü - Applied Surface Science, 2024 - Elsevier
Ultraviolet (UV) photodetectors have found wide-ranging applications, ranging from optical
communications to chemical detection. High performance UV photodetectors that can be self …
communications to chemical detection. High performance UV photodetectors that can be self …
Upgraded photosensitivity under the influence of Yb doped on V2O5 thin films as an interfacial layer in MIS type Schottky barrier diode as photodiode application
V Balasubramani, J Chandrasekaran… - Journal of Solid State …, 2021 - Elsevier
In this study, rare earth ytterbium (Yb)-doped V 2 O 5 thin films were effectively coated on
glass and Si substrates by the sol-gel method combined with the spin coating method. The …
glass and Si substrates by the sol-gel method combined with the spin coating method. The …
Optical and electrical investigations of tungsten trioxide for optoelectronics devices
This study aimed to investigate the properties of WO3 thin films deposited on glass and
silicon substrates using the thermal spray technique. The films were prepared with a WO3 …
silicon substrates using the thermal spray technique. The films were prepared with a WO3 …
Superior role of V2O5 and yttrium interface layers in enhancing MIS radical photodiode performance
In this study, Cu/n-Si Schottky diodes with V 2 O 5–Y insulating interface layer were
designed for the fabrication of metal/insulator/semiconductor (MIS) structures. The effects of …
designed for the fabrication of metal/insulator/semiconductor (MIS) structures. The effects of …
Superior photoresponse MIS Schottky barrier diodes with nanoporous: Sn–WO 3 films for ultraviolet photodetector application
M Raj, C Joseph, M Subramanian… - New Journal of …, 2020 - pubs.rsc.org
A highly ordered nanoporous structure based MIS type photo-detector is a promising device
for next-generation optoelectronic applications due to its excellent light absorption, better …
for next-generation optoelectronic applications due to its excellent light absorption, better …
Enhanced photosensitive of Schottky diodes using SrO interfaced layer in MIS structure for optoelectronic applications
V Balasubramani, PV Pham, A Ibrahim, J Hakami… - Optical Materials, 2022 - Elsevier
In this study, the Schottky diodes (SDs) based on an interfacial layer of strontium oxide (SrO)
thin film were fabricated. Thin films (TFs) were coated on glass and silicon substrates by low …
thin film were fabricated. Thin films (TFs) were coated on glass and silicon substrates by low …
Improved photodetector performance of high-k dielectric material (La) doped V2O5 thin films as an interfacial layer in Schottky barrier diodes
V Balasubramani, J Chandrasekaran… - Surfaces and …, 2021 - Elsevier
In this work, high-k dielectric material of lanthanum (La) doped vanadium pentoxide (V 2 O
5) thin films is deposited on glass substrate using spin coating route and annealed at 500° …
5) thin films is deposited on glass substrate using spin coating route and annealed at 500° …
Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@ CuS/n-Si diode for photodetection applications
Abstract Development of photo detectors based on different semiconducting materials with
high performance has been in progress in recent past, however, there is a lot of difficulties in …
high performance has been in progress in recent past, however, there is a lot of difficulties in …