Electrical charge state identification and control for the silicon vacancy in 4H-SiC
Reliable single-photon emission is crucial for realizing efficient spin-photon entanglement
and scalable quantum information systems. The silicon vacancy (V Si) in 4H-SiC is a …
and scalable quantum information systems. The silicon vacancy (V Si) in 4H-SiC is a …
[HTML][HTML] Defect-engineered graphene-on-silicon-carbide platform for magnetic field sensing at greatly elevated temperatures
T Ciuk, R Kozłowski, A Romanowska, A Zagojski… - Carbon Trends, 2023 - Elsevier
High-temperature electrical properties of p-type hydrogen-intercalated quasi-free-standing
epitaxial Chemical Vapor Deposition graphene on semi-insulating vanadium-compensated …
epitaxial Chemical Vapor Deposition graphene on semi-insulating vanadium-compensated …
Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1–10 MeV
Radiation damage produced in 4H‐SiC n‐epilayers by electrons of different energies is
presented. Junction barrier Schottky power SiC diodes are irradiated with 1.05, 2.1, 5, and …
presented. Junction barrier Schottky power SiC diodes are irradiated with 1.05, 2.1, 5, and …
Detection and depth analyses of deep levels generated by ion implantation in n-and p-type 4H-SiC
The authors investigated deep levels in the whole energy range of bandgap of 4 H-Si C,
which are generated by low-dose N+, P+, and Al+ implantation, by deep level transient …
which are generated by low-dose N+, P+, and Al+ implantation, by deep level transient …
Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC
Electrical properties of point defects in 4 H-SiC have been studied extensively, but those
related to carbon interstitials (C i) have remained elusive until now. Indeed, when …
related to carbon interstitials (C i) have remained elusive until now. Indeed, when …
[HTML][HTML] Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC
Deep levels in the whole bandgap of 4H-SiC generated by reactive ion etching (RIE) are
investigated with both n-and p-type SiC Schottky barrier diodes by deep-level transient …
investigated with both n-and p-type SiC Schottky barrier diodes by deep-level transient …
Interaction of low-energy muons with defect profiles in proton-irradiated Si and -SiC
Muon spin rotation (μ SR) with low-energy muons is a powerful nuclear method where
electrical and magnetic properties of thin films can be investigated in a depth-resolved …
electrical and magnetic properties of thin films can be investigated in a depth-resolved …
Point defects in 4H–SiC epilayers introduced by neutron irradiation
Electronic properties of radiation damage produced in 4H–SiC by neutron irradiation and its
effect on electrical parameters of Junction Barrier Schottky (JBS) diodes were investigated …
effect on electrical parameters of Junction Barrier Schottky (JBS) diodes were investigated …
Reduction of deep levels generated by ion implantation into n-and p-type 4H–SiC
The authors have investigated effects of thermal oxidation on deep levels in the whole
energy range of the band gap of 4H–SiC by deep level transient spectroscopy. The deep …
energy range of the band gap of 4H–SiC by deep level transient spectroscopy. The deep …
Mechanism of electrical performance degradation of 4H-SiC junction barrier Schottky diodes induced by neutron irradiation
H Li, J Wang, B Song, H Li, L Geng, B Duan… - Nuclear Instruments and …, 2024 - Elsevier
Abstract 4H-SiC junction barrier Schottky diodes (JBS) were irradiated by reactor neutrons.
The degradation in the electrical performance of JBS is characterized by IV and CV …
The degradation in the electrical performance of JBS is characterized by IV and CV …