Influence of plasmon excitations on atomic-resolution quantitative 4D scanning transmission electron microscopy
Scanning transmission electron microscopy (STEM) allows to gain quantitative information
on the atomic-scale structure and composition of materials, satisfying one of todays major …
on the atomic-scale structure and composition of materials, satisfying one of todays major …
[HTML][HTML] Measuring electrical properties in semiconductor devices by pixelated STEM and off-axis electron holography (or convergent beams vs. plane waves).
We demonstrate the use of both pixelated differential phase contrast (DPC) scanning
transmission electron microscopy (STEM) and off-axis electron holography (EH) for the …
transmission electron microscopy (STEM) and off-axis electron holography (EH) for the …
Three-dimensional distribution of individual atoms in the channels of beryl
Single atom detection in nanoporous materials is a significant challenge, particularly due to
their sensitivity to electron irradiation. Here, natural beryl (Be3Al2Si6O18) is used as a …
their sensitivity to electron irradiation. Here, natural beryl (Be3Al2Si6O18) is used as a …
Towards the interpretation of a shift of the central beam in nano-beam electron diffraction as a change in mean inner potential
The measurement of electric fields in scanning transmission electron microscopy (STEM) is
a highly investigated field of research. The constant improvement of spatial resolution in …
a highly investigated field of research. The constant improvement of spatial resolution in …
Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM
This paper presents a comprehensive investigation of an extended method to determine
composition of materials by scanning transmission electron microscopy (STEM) high angle …
composition of materials by scanning transmission electron microscopy (STEM) high angle …
Wet-chemical etching of FIB lift-out TEM lamellae for damage-free analysis of 3-D nanostructures
Reducing ion beam damage from the focused ion beam (FIB) during fabrication of cross
sections is a well-known challenge for materials characterization, especially cross sectional …
sections is a well-known challenge for materials characterization, especially cross sectional …
Angle-resolved STEM using an iris aperture: Scattering contributions and sources of error for the quantitative analysis in Si
The angle-resolved electron scattering is investigated in scanning-transmission electron
microscopy (STEM) using a motorised iris aperture placed above a conventional annular …
microscopy (STEM) using a motorised iris aperture placed above a conventional annular …
Segregation at interfaces in (GaIn) As/Ga (AsSb)/(GaIn) As-quantum well heterostructures explored by atomic resolution STEM
Surface segregation and interaction effects of In and Sb in (GaIn) As/Ga (AsSb)/(GaIn) As-
“W”-type quantum well heterostructures (“W”-QWHs) are investigated by high angle annular …
“W”-type quantum well heterostructures (“W”-QWHs) are investigated by high angle annular …
Ge/SiGe parabolic quantum wells
Quantum wells with parabolic confining potentials allow the realization of semiconductor
heterostructures mimicking the physical properties of a quantum harmonic oscillator. Here …
heterostructures mimicking the physical properties of a quantum harmonic oscillator. Here …
Atomic-scale measurement of polar entropy
Entropy is a fundamental thermodynamic quantity that is a measure of the accessible
microstates available to a system, with the stability of a system determined by the magnitude …
microstates available to a system, with the stability of a system determined by the magnitude …