Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …

Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …

Accelerated lifetime tests (ALTs) play a critical role in long-term reliability studies of SiC
MOSFETs, including lifetime estimation, failure analysis, and condition monitoring. This …

Only a few years ago, an account of degradation of silicon carbide high-voltage pin diodes
was presented at the European Conference on Silicon Carbide and Related Compounds …

The phenomenon of recombination-induced stacking faults in high-voltage pn diodes in SiC
has been previously shown to increase the forward voltage drop due to reduction of minority …

Silicon carbide (SiC) as both the most important non-oxide ceramic and promising
semiconductor material grows stoichiometric SiO 2 as its native oxide. During passive …

The extension of stacking faults in a forward-biased 4H-SiC PiN diodes by the
recombination-enhanced motion of leading partial dislocations has been investigated by the …

SiC bipolar degradation, which is caused by stacking fault expansion from basal plane
dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the …

Recent attempts to make SiC diodes have revealed a problem with stacking fault expansion
in the material, leading to unstable devices. In this paper, we present detailed results from a …

Irradiation-induced anisotropic swelling in hexagonal α-SiC is known to degrade the
mechanical properties of SiC; however, the associated physical mechanism and …