Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention
in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and …

Low dimensional materials including quantum dots, nanowires, 2D materials, and so forth
have attracted increasing research interests for electronic and optoelectronic devices in …

PbS QDs/a‐IGZO based sensitized photo field‐effect transistors are promising candidate for
next‐generation near‐infrared photodetectors due to their ultra‐high sensitivity, gate …

In recent years, 2D layered materials have emerged as potential candidates in the opto-
electronic field due to their intriguing optical, electrical and mechanical properties …

The large diversity of applications in our daily lives that rely on photodetection technology
requires photodetectors with distinct properties. The choice of an adequate photodetecting …

This review is focused on new concepts and recent progress in the development of three
major quantum dot (QD) based optoelectronic devices: photovoltaic cells, photodetectors …

Colloidal quantum dots (CQDs) are emerging as promising materials for the next generation
infrared (IR) photodetectors, due to their easy solution processing, low cost manufacturing …

With the increasing demand for near-infrared (NIR) detection in the fields of automation,
military industry, communications and medical health, how to develop novel high quality and …

In recent decades, quantum dots (QDs) with tunable bandgap, large absorption coefficient,
high quantum yield, multiexciton effect, and easy solution processing have unparalleled …

Low cost, high absorption coefficient, tunable band gap, and compatibility with flexible
devices make lead sulfide (PbS) quantum dots (QDs) based photoconductors promising …