Ultrawide-bandgap semiconductors: An overview
Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …
renaissance exemplified by advances in material-level understanding, extensions of known …
The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Status and prospects of AlN templates on sapphire for ultraviolet light‐emitting diodes
Herein, the scope is to provide an overview on the current status of AlN/sapphire templates
for ultraviolet B (UVB) and ultraviolet C (UVC) light‐emitting diodes (LEDs) with focus on the …
for ultraviolet B (UVB) and ultraviolet C (UVC) light‐emitting diodes (LEDs) with focus on the …
A first-principles understanding of point defects and impurities in GaN
Attaining control over the electrical conductivity of gallium nitride through impurity do** is
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …
Quantum engineering of non-equilibrium efficient p-do** in ultra-wide band-gap nitrides
K Jiang, X Sun, Z Shi, H Zang, J Ben… - Light: Science & …, 2021 - nature.com
Ultra-wide band-gap nitrides have huge potential in micro-and optoelectronics due to their
tunable wide band-gap, high breakdown field and energy density, excellent chemical and …
tunable wide band-gap, high breakdown field and energy density, excellent chemical and …
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations
The long-term stability of ultraviolet (UV)-C light-emitting diodes (LEDs) is of major
importance for many applications. To improve the understanding in this field, we analyzed …
importance for many applications. To improve the understanding in this field, we analyzed …
Efficiency improvement of AlGaN-based deep-ultraviolet light-emitting diodes and their virus inactivation application
Y Saito, S Wada, K Nagata, H Makino… - Japanese Journal of …, 2021 - iopscience.iop.org
AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) are key components for the
inactivation of viruses. Highly efficient and high-power UV-LEDs, capable of inactivating …
inactivation of viruses. Highly efficient and high-power UV-LEDs, capable of inactivating …
Electron paramagnetic resonance study of neutral Mg acceptors in β-Ga2O3 crystals
BE Kananen, LE Halliburton, EM Scherrer… - Applied Physics …, 2017 - pubs.aip.org
Electron paramagnetic resonance (EPR) is used to directly observe and characterize neutral
Mg acceptors ( M g Ga 0) in a β-Ga 2 O 3 crystal. These acceptors, best considered as …
Mg acceptors ( M g Ga 0) in a β-Ga 2 O 3 crystal. These acceptors, best considered as …
Polarization-dependent hole generation in 222 nm-band AlGaN-based Far-UVC LED: a way forward to the epi-growers of MBE and MOCVD
Far-ultraviolet-C (Far-UVC) light-emitting-diodes (LEDs) offer a promising technology for the
disinfection of surface, air, water, food and airborne disease transmission in occupied …
disinfection of surface, air, water, food and airborne disease transmission in occupied …
Suppressing the efficiency droop in AlGaN-based UVB LEDs
The optoelectronic properties of semiconducting aluminum gallium nitride (AlGaN)-based
ultraviolet-B (UVB) light-emitting diodes (LEDs) are crucial for real-world medical …
ultraviolet-B (UVB) light-emitting diodes (LEDs) are crucial for real-world medical …