This chapter reviews the current NAND Flash technology status and future directions. The
fundamental NAND Flash structure, device, and array operation principles will be discussed …

QLC (4-bit-per-cell) and more-bit-per-cell 3D NAND flash memories are increasingly
adopted in large storage systems. While achieving significant cost reduction, these …

High-density flash-memory chips are under tremendous demands with the exponential
growth of data. At the same time, the slow read performance of these high-density flash …

With the bit density improvement and the 3-D flash techniques, modern NAND flash-memory-
based solid-state disks (SSDs) dramatically increase the flash storage capacity. However, in …

Temporary read errors (TRE) refers to the high temporary fail bit count (FBC) in the first read,
when 3D NAND recovers froman idle state. This can seriously deteriorate the Quality of …

When multiple apps with different I/O priorities share a high-performance SSD, it is important
to differentiate the I/O QoS level based on the I/O priority of each app. In this paper, we study …

Modern high-performance SSDs have multiple flash channels operating in parallel to
achieve their high I/O bandwidth. However, when the effective bandwidth of these flash …

As the flash-based storage devices age with program/erase (P/E) cycles, they require an
increasing number of read retries for error correction, which in turn deteriorates their read …

Considering 3D NAND flash has a new property of process variation (PV), which causes
different raw bit error rates (RBER) among different layers of the flash block. This article …

Due to its low cost and high performance, 3D NAND flash memory is a popular choice as the
storage device in edge computing platforms. One of the critical challenges in 3D NAND flash …