Magnetically engineered magnetic tunnel junctions (MTJs) show promise as non-volatile
storage cells in high-performance solid-state magnetic random access memories (MRAM) …

Nonlocal spin transport in nanostructured devices with ferromagnetic injector (F1) and
detector (F2) electrodes connected to a normal conductor (N) is studied. We reveal how the …

▪ Abstract Based on the spin conservation in electron tunneling across an insulator (I) and
the spin polarization of conduction electrons in ferromagnets (FM) established by Meservey …

Spin-polarized transport in ferromagnetic tunnel junctions, characterized by tunnel
magnetoresistance, has already been proven to have great potential for application in the …

Spin polarized tunneling studies by Tedrow and Meservey in the early 1970s that showed
the spin conservation in electron tunneling gave rise to the possibility of spin sensitive …

We investigate the integration of Al 2 O 3 high-k dielectric on two-dimensional (2D) crystals
of boron nitride (BN) and molybdenum disulfide (MoS 2) by atomic layer deposition (ALD) …

Magnetic oxide materials possessing a high degree of spin polarization have been found to
exhibit enhanced spin-dependent transport properties. For example, interfaces created by …

We report on spin-polarized tunneling in fully epitaxial Fe/MgO/Fe/Co tunnel junctions. By
increasing the thickness of the insulating layer (tMgO), we have strongly enhanced the …

The nonlocal spin transport in a nanostructure device consisting of ferromagnetic spin
injector (F1) and spin detector (F2) electrodes connected to a normal conductor (N) or a …

We have fabricated spin polarized tunneling devices based upon half-metallic manganites
(La 0.7 Ca 0.3 MnO 3) incorporating NdGaO 3 as a barrier material. These devices show …