Minority carrier transport properties are an indicator of AlGaN quality. This characteristic is
particularly of significant importance for AlGaN-based bipolar devices. The goal of this …

The AlGaInN quaternary alloy system is uniquely suited for numerous device applications
because the bandgap can be varied from 1.9 to 6.2 eV by changing the alloy composition …

Minority carrier diffusion length in epitaxial GaN layers was measured as a function of
majority carrier concentration and temperature. The diffusion length of holes in n-type GaN is …

The microstructure of oxidized Ni/Au films on p-GaN was examined to elucidate the
formation of a low resistance ohmic contact to p-GaN with a field-emission gun transmission …

Luminescence spectra of GaN epitaxial layers grown on sapphire display a strong intensity
modulation of the below-band gap transitions and on the low-energy side of the near-band …

The N incorporation behavior in InP grown by gas‐source molecular beam epitaxy using a N
radical beam source has been investigated. At a given growth temperature, the N …

We present results from a time-resolved study of radiative recombination in InGaN quantum
wells. The sample was grown by atmospheric pressure metal-organic chemical-vapor …

Combined electron beam induced current and transmission electron microscopy (TEM)
measurements have been performed on both undoped and Si-doped AlGaN epitaxial films …

The relative roles of radiative and nonradiative processes and the polarization field on the
light emission from blue (∼ 425 nm) InGaN light emitting diodes (LEDs) have been studied …

We present a room-temperature study of the well-width-dependent carrier lifetimes in InGaN
single-quantum wells. At room temperature, carrier recombination was found to be …