[HTML][HTML] Bandgap engineering of high mobility two-dimensional semiconductors toward optoelectronic devices

Q Hao, P Li, J Liu, J Huang, W Zhang - Journal of Materiomics, 2023 - Elsevier
Over the last few years, great advances have been achieved in exploration of high-mobility
two-dimensional (2D) semiconductors such as metal chalcogenide InSe and noble …

Morphotaxy of layered van der Waals materials

D Lam, D Lebedev, MC Hersam - ACS nano, 2022 - ACS Publications
Layered van der Waals (vdW) materials have attracted significant attention due to their
materials properties that can enhance diverse applications including next-generation …

Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures

G Pasquale, Z Sun, G Migliato Marega… - Nature …, 2024 - nature.com
The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant
attention for its potential in energy conversion, thermoelectrics and spintronics. However …

Wafer-scale growth of two-dimensional, phase-pure InSe

S Song, S Jeon, M Rahaman, J Lynch, D Rhee… - Matter, 2023 - cell.com
Summary Two-dimensional (2D) indium monoselenide (InSe) has attracted significant
attention as an ultrathin III–VI semiconductor with a combination of favorable attributes that …

Acoustic shock wave-induced phase transition in indium selenide: tuning band gap energy for solar cell applications

S Oviya, FIM Bincy, S Arumugam, KK Bharathi… - …, 2024 - pubs.rsc.org
Indium selenide is a semiconducting material that has a layer-by-layer crystal structure. The
present work treats indium selenide with dynamic shock waves using a semi-automatic …

Growth of Nanometer-Thick γ-InSe on Si (111) 7× 7 by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices

DSH Liu, M Hilse, AR Lupini, JM Redwing… - ACS Applied Nano …, 2023 - ACS Publications
γ-InSe is a semiconductor that holds promising potential in high-performance field-effect
transistors and optoelectronic devices. Large-scale, single-phase γ-InSe deposition has …

Solution-processed wafer-scale indium selenide semiconductor thin films with high mobilities

J He, J Ge, J Xue, T **a, Y Dai, S Wang, W Li, Z Lin - Nature Electronics, 2025 - nature.com
Solution-processed two-dimensional semiconductors could be used to create electronic
devices on large scales and at low cost. However, the electronic performance of devices …

Carrier and phonon transport in 2D InSe and its Janus structures

W Wan, R Guo, Y Ge, Y Liu - Journal of Physics: Condensed …, 2023 - iopscience.iop.org
Abstract Recently, two-dimensional (2D) Indium Selenide (InSe) has been receiving much
attention in the scientific community due to its reduced size, extraordinary physical …

[HTML][HTML] Anisotropic thermal conductivity of layered indium selenide

A Rai, VK Sangwan, JT Gish, MC Hersam… - Applied Physics …, 2021 - pubs.aip.org
Layered indium selenide (InSe) has emerged as a promising two-dimensional
semiconductor due to its high electron mobility and direct optical bandgap in the few-layer …

Van der Waals heteroepitaxy of GaSe and InSe, quantum wells, and superlattices

MS Claro, JP Martínez‐Pastor… - Advanced Functional …, 2023 - Wiley Online Library
Bandgap engineering and quantum confinement in semiconductor heterostructures provide
the means to fine‐tune material response to electromagnetic fields and light in a wide range …