Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
[HTML][HTML] Bandgap engineering of high mobility two-dimensional semiconductors toward optoelectronic devices
Q Hao, P Li, J Liu, J Huang, W Zhang - Journal of Materiomics, 2023 - Elsevier
Over the last few years, great advances have been achieved in exploration of high-mobility
two-dimensional (2D) semiconductors such as metal chalcogenide InSe and noble …
two-dimensional (2D) semiconductors such as metal chalcogenide InSe and noble …
Morphotaxy of layered van der Waals materials
Layered van der Waals (vdW) materials have attracted significant attention due to their
materials properties that can enhance diverse applications including next-generation …
materials properties that can enhance diverse applications including next-generation …
Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures
The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant
attention for its potential in energy conversion, thermoelectrics and spintronics. However …
attention for its potential in energy conversion, thermoelectrics and spintronics. However …
Wafer-scale growth of two-dimensional, phase-pure InSe
Summary Two-dimensional (2D) indium monoselenide (InSe) has attracted significant
attention as an ultrathin III–VI semiconductor with a combination of favorable attributes that …
attention as an ultrathin III–VI semiconductor with a combination of favorable attributes that …
Acoustic shock wave-induced phase transition in indium selenide: tuning band gap energy for solar cell applications
Indium selenide is a semiconducting material that has a layer-by-layer crystal structure. The
present work treats indium selenide with dynamic shock waves using a semi-automatic …
present work treats indium selenide with dynamic shock waves using a semi-automatic …
Growth of Nanometer-Thick γ-InSe on Si (111) 7× 7 by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices
γ-InSe is a semiconductor that holds promising potential in high-performance field-effect
transistors and optoelectronic devices. Large-scale, single-phase γ-InSe deposition has …
transistors and optoelectronic devices. Large-scale, single-phase γ-InSe deposition has …
Solution-processed wafer-scale indium selenide semiconductor thin films with high mobilities
Solution-processed two-dimensional semiconductors could be used to create electronic
devices on large scales and at low cost. However, the electronic performance of devices …
devices on large scales and at low cost. However, the electronic performance of devices …
Carrier and phonon transport in 2D InSe and its Janus structures
Abstract Recently, two-dimensional (2D) Indium Selenide (InSe) has been receiving much
attention in the scientific community due to its reduced size, extraordinary physical …
attention in the scientific community due to its reduced size, extraordinary physical …
[HTML][HTML] Anisotropic thermal conductivity of layered indium selenide
Layered indium selenide (InSe) has emerged as a promising two-dimensional
semiconductor due to its high electron mobility and direct optical bandgap in the few-layer …
semiconductor due to its high electron mobility and direct optical bandgap in the few-layer …
Van der Waals heteroepitaxy of GaSe and InSe, quantum wells, and superlattices
Bandgap engineering and quantum confinement in semiconductor heterostructures provide
the means to fine‐tune material response to electromagnetic fields and light in a wide range …
the means to fine‐tune material response to electromagnetic fields and light in a wide range …