The promise of spintronics for unconventional computing

G Finocchio, M Di Ventra, KY Camsari… - Journal of Magnetism …, 2021 - Elsevier
Novel computational paradigms may provide the blueprint to help solving the time and
energy limitations that we face with our modern computers, and provide solutions to complex …

Stochastic memory devices for security and computing

R Carboni, D Ielmini - Advanced Electronic Materials, 2019 - Wiley Online Library
With the widespread use of mobile computing and internet of things, secured communication
and chip authentication have become extremely important. Hardware‐based security …

A scaling roadmap and performance evaluation of in-plane and perpendicular MTJ based STT-MRAMs for high-density cache memory

KC Chun, H Zhao, JD Harms, TH Kim… - IEEE journal of solid …, 2012 - ieeexplore.ieee.org
This paper explores the scalability of in-plane and perpendicular MTJ based STT-MRAMs
from 65 nm to 8 nm while taking into consideration realistic variability effects. We focus on …

Multi retention level STT-RAM cache designs with a dynamic refresh scheme

Z Sun, X Bi, H Li, WF Wong, ZL Ong, X Zhu… - proceedings of the 44th …, 2011 - dl.acm.org
Spin-transfer torque random access memory (STT-RAM) has received increasing attention
because of its attractive features: good scalability, zero standby power, non-volatility and …

Multistate Compound Magnetic Tunnel Junction Synapses for Digital Recognition

A Kumar, DJX Lin, D Das, L Huang… - … Applied Materials & …, 2024 - ACS Publications
The quest to mimic the multistate synapses for bioinspired computing has triggered nascent
research that leverages the well-established magnetic tunnel junction (MTJ) technology …

Voltage-controlled magnetic anisotropy in spintronic devices

PK Amiri, KL Wang - Spin, 2012 - World Scientific
Electric-field-control of magnetism can dramatically improve the energy efficiency of
spintronic devices and enhance the performance of magnetic memories. More generally, it …

Spin-based computing: Device concepts, current status, and a case study on a high-performance microprocessor

J Kim, A Paul, PA Crowell, SJ Koester… - Proceedings of the …, 2014 - ieeexplore.ieee.org
As the end draws near for Moore's law, the search for low-power alternatives to
complementary metal-oxide-semiconductor (CMOS) technology is intensifying. Among the …

[PDF][PDF] STTRAM SCALING AND RETENTION FAILURE.

H Naeimi, C Augustine, A Raychowdhury, SL Lu… - intel technology …, 2013 - intel.com
In this article, we focus on the solutions in the second category, that is, relaxing the
nonvolatility condition to allow lower bound on D. Although there have been an extensive …

Spin injection from Heusler alloys into semiconductors: A materials perspective

R Farshchi, M Ramsteiner - Journal of Applied Physics, 2013 - pubs.aip.org
The notion of using electron spins as bits for highly efficient computation coupled with non-
volatile data storage has driven an intense international research effort over the past …

A technology-agnostic MTJ SPICE model with user-defined dimensions for STT-MRAM scalability studies

J Kim, A Chen, B Behin-Aein, S Kumar… - 2015 IEEE custom …, 2015 - ieeexplore.ieee.org
The development of a scalable and user-friendly SPICE model is a key aspect of exploring
the potential of spin-transfer torque MRAM (STT-MRAM). A self-contained magnetic tunnel …